Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTY1R4N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 1.4A TO252	490
IXTA180N10T Wickmann / Littelfuse	MOSFET N-CH 100V 180A TO263	0
IXTP80N10T Wickmann / Littelfuse	MOSFET N-CH 100V 80A TO220AB	3318
IXFH30N60P Wickmann / Littelfuse	MOSFET N-CH 600V 30A TO247AD	1890
IXTP32N65XM Wickmann / Littelfuse	MOSFET N-CH 650V 14A TO220-3	700
IXTH16N10D2 Wickmann / Littelfuse	MOSFET N-CH 100V 16A TO247	319960
IXTH450P2 Wickmann / Littelfuse	MOSFET N-CH 500V 16A TO247	0
IXTA60N10T Wickmann / Littelfuse	MOSFET N-CH 100V 60A TO263	151
IXFH22N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 22A TO247	125
IXFR48N60P Wickmann / Littelfuse	MOSFET N-CH 600V 32A ISOPLUS247	30510
IXFP16N50P3 Wickmann / Littelfuse	MOSFET N-CH 500V 16A TO220AB	0
IXFA76N15T2 Wickmann / Littelfuse	MOSFET N-CH 150V 76A TO263AA	2050
IXTA4N150HV Wickmann / Littelfuse	MOSFET N-CH 1500V 4A TO263	850
IXFH86N30T Wickmann / Littelfuse	MOSFET N-CH 300V 86A TO247AD	0
IXTA2N100P Wickmann / Littelfuse	MOSFET N-CH 1000V 2A TO263	0
IXFH52N30P Wickmann / Littelfuse	MOSFET N-CH 300V 52A TO247AD	0
IXTH1N200P3 Wickmann / Littelfuse	MOSFET N-CH 2000V 1A TO247	28600
IXFH18N60X Wickmann / Littelfuse	MOSFET N-CH 600V 18A TO247	1710
IXTH200N10T Wickmann / Littelfuse	MOSFET N-CH 100V 200A TO247	2572
IXFH102N15T Wickmann / Littelfuse	MOSFET N-CH 150V 102A TO247AD	1110

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS