Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
IXTR210P10T Wickmann / Littelfuse	MOSFET P-CH 100V 195A ISOPLUS247	0
IXTT20N50D Wickmann / Littelfuse	MOSFET N-CH 500V 20A TO268	8
IXTT170N10P Wickmann / Littelfuse	MOSFET N-CH 100V 170A TO268	33420
IXFX26N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 26A PLUS247-3	0
IXFK26N120P Wickmann / Littelfuse	MOSFET N-CH 1200V 26A TO264AA	6
IXTQ100N25P Wickmann / Littelfuse	MOSFET N-CH 250V 100A TO3P	30
IXTH15N50L2 Wickmann / Littelfuse	MOSFET N-CH 500V 15A TO247	0
IXTY1R6N50D2-TRL Wickmann / Littelfuse	MOSFET N-CH 500V 1.6A TO252AA	2580
IXTA50N20P-TRL Wickmann / Littelfuse	MOSFET N-CH 200V 50A TO263	0
IXFH52N50P2 Wickmann / Littelfuse	MOSFET N-CH 500V 52A TO247AD	1
IXTY01N100 Wickmann / Littelfuse	MOSFET N-CH 1000V 100MA TO252AA	12601960
IXTH68P20T Wickmann / Littelfuse	MOSFET P-CH 200V 68A TO247	1110
IXTA160N10T7 Wickmann / Littelfuse	MOSFET N-CH 100V 160A TO263-7	1500
IXTH62N65X2 Wickmann / Littelfuse	MOSFET N-CH 650V 62A TO247	35
IXTA90N055T2 Wickmann / Littelfuse	MOSFET N-CH 55V 90A TO263	1300
IXTH13N80 Wickmann / Littelfuse	MOSFET N-CH 800V 13A TO247	0
IXTK60N50L2 Wickmann / Littelfuse	MOSFET N-CH 500V 60A TO264	538
IXFK44N80Q3 Wickmann / Littelfuse	MOSFET N-CH 800V 44A TO264AA	1275
IXFP30N25X3M Wickmann / Littelfuse	MOSFET N-CH 250V 30A TO220	1750
IXTK100N25P Wickmann / Littelfuse	MOSFET N-CH 250V 100A TO264	600

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS