Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TK16J60W,S1VE Toshiba Electronic Devices and Storage Corporation	X35 PB-F POWER MOSFET TRANSISTOR	65
SSM3J133TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 5.5A UFM	36329
TPH1R306P1,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 100A 8SOP	0
TPN2R703NL,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 45A 8TSON	2655
TK200F04N1L,LXGQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 200A TO220SM	1385
TK10A60W,S4VX Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 9.7A TO220SIS	0
SSM6K341NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 6A 6UDFNB	1
SSM3K344R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 3A SOT23F	8515
TJ60S06M3L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 60V 60A DPAK	8972
SSM3K7002KFU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 60V 400MA USM	2793
TK40E10N1,S1X Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 100V 90A TO220	3
TJ60S04M3L,LXHQ Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 60A DPAK	3813
SSM3J340R,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 30V 4A SOT23F	3761
TPH2R408QM,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 80V 120A 8SOP	0
2SK3566(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 900V 2.5A TO220SIS	45
TK6A55DA(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 550V 5.5A TO220SIS	0
TPN1R603PL,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 80A 8TSON	15760
TK5A55D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 550V 5A TO220SIS	0
TPH6R004PL,LQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 87A/49A 8SOP	0
TK7P65W,RQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 6.8A DPAK	874

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS