Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
TPC8133,LQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 9A 8SOP	0
TPHR7904PB,L1XHQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 150A 8SOP	9689
SSM3K37CT,L3F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 20V 200MA CST3	0
2SK209-Y(TE85L,F) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 10V 14MA SC59	11322
TK8A50D(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 8A TO220SIS	0
SSM3J114TU(T5L,T) Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 20V 1.8A UFM	4928
TPWR6003PL,L1Q Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 150A 8DSOP	16059
SSM3J117TU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CHANNEL 30V 2A UFM	9239
TK040Z65Z,S1F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 57A TO247-4L	100
TK39N60W5,S1VF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 38.8A TO247	3903
TK160F10N1L,LXGQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 100V 160A TO220SM	1858
TPC8132,LQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 40V 7A 8SOP	0
SSM6J511NU,LF Toshiba Electronic Devices and Storage Corporation	MOSFET P-CH 12V 14A 6UDFNB	1299
TK9J90E,S1E Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 900V 9A TO3P	554
TK6P60W,RVQ Toshiba Electronic Devices and Storage Corporation	MOSFET N CH 600V 6.2A DPAK	0
TPH7R204PL,LQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 48A 8SOP	373
SSM3K59CTB,L3F Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 2A CST3B	5462
SSM6K781G,LF Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 12V 7A 6WCSP6C	1442
SSM3K15CT(TPL3) Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 100MA CST3	0
TK14G65W5,RQ Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 650V 13.7A D2PAK	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS