Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STL8N10F7 STMicroelectronics	MOSFET N-CH 100V POWERFLAT	2831
STF5N105K5 STMicroelectronics	MOSFET N-CH 1050V 3A TO220	0
STP6NK90ZFP STMicroelectronics	MOSFET N-CH 900V 5.8A TO220FP	471
STL20NF06LAG STMicroelectronics	MOSFET N-CH 60V 20A POWERFLAT	0
STL42N65M5 STMicroelectronics	MOSFET N-CH 650V 4A PWRFLAT HV	0
STD40NF10 STMicroelectronics	MOSFET N-CH 100V 50A DPAK	1097
STW18NM80 STMicroelectronics	MOSFET N-CH 800V 17A TO247-3	503
STD13N60M2 STMicroelectronics	MOSFET N-CH 600V 11A DPAK	0
STW26NM60ND STMicroelectronics	MOSFET N-CH 600V 21A TO247	0
STI57N65M5 STMicroelectronics	MOSFET N-CH 650V 42A I2PAK	0
STB37N60DM2AG STMicroelectronics	MOSFET N-CH 600V 28A D2PAK	16156
STL18N60M2 STMicroelectronics	MOSFET N-CH 600V 9A POWERFLAT HV	0
STH110N10F7-2 STMicroelectronics	MOSFET N CH 100V 110A H2PAK	0
STWA75N60DM6 STMicroelectronics	MOSFET N-CH 600V 72A TO247	553
STI270N4F3 STMicroelectronics	MOSFET N-CH 40V 160A I2PAK	0
SCTH90N65G2V-7 STMicroelectronics	SICFET N-CH 650V 90A H2PAK-7	873
STW12NK95Z STMicroelectronics	MOSFET N-CH 950V 10A TO247-3	0
STD7N80K5 STMicroelectronics	MOSFET N-CH 800V 6A DPAK	2488
STP25N60M2-EP STMicroelectronics	MOSFET N-CH 600V 18A TO220	1029
STN4NF20L STMicroelectronics	MOSFET N-CH 200V 1A SOT-223	7621

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS