Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STH240N75F3-2 STMicroelectronics	MOSFET N CH 75V 180A H2PAK-2	93
STP40NF03L STMicroelectronics	MOSFET N-CH 30V 40A TO220AB	2637
STL24NM60N STMicroelectronics	MOSFET N-CH 600V 16A POWERFLAT	6987
STF6N95K5 STMicroelectronics	MOSFET N-CH 950V 9A TO220FP	2265
STD18N60M6 STMicroelectronics	MOSFET N-CH 600V 13A DPAK	0
STFW3N150 STMicroelectronics	MOSFET N-CH 1500V 2.5A ISOWATT	733
STI24NM60N STMicroelectronics	MOSFET N CH 600V 17A I2PAK	991
STF13N80K5 STMicroelectronics	MOSFET N-CH 800V 12A TO220FP	3883
STF16N60M6 STMicroelectronics	MOSFET N-CH 600V TO220-3 FP	0
STP12N50M2 STMicroelectronics	MOSFET N-CH 500V 10A TO220	1762
STW28NM50N STMicroelectronics	MOSFET N-CH 500V 21A TO247-3	1612
STP6NK60Z STMicroelectronics	MOSFET N-CH 600V 6A TO220AB	984
STFU16N65M2 STMicroelectronics	MOSFET N-CH 650V 11A TO220FP	965
STW70N65DM6 STMicroelectronics	MOSFET N-CH 650V 68A TO247	0
STP10NK60Z STMicroelectronics	MOSFET N-CH 600V 10A TO220AB	888
STL21N65M5 STMicroelectronics	MOSFET N-CH 650V 17A PWRFLAT HV	5980
STW56N60DM2 STMicroelectronics	MOSFET N-CH 600V 50A TO247	0
STH47N60DM6-2AG STMicroelectronics	POWER TRANSISTORS	100
STF7NM80 STMicroelectronics	MOSFET N-CH 800V 6.5A TO220FP	1957
STB45N30M5 STMicroelectronics	NCHANNEL 300 V 0.037 OHM TYP. 53	59

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS