Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STW30NM60N STMicroelectronics	MOSFET N-CH 600V 25A TO247-3	0
STI30N65M5 STMicroelectronics	MOSFET N-CH 650V 22A I2PAK	0
STB21N90K5 STMicroelectronics	MOSFET N-CH 900V 18.5A D2PAK	1141
STH250N6F3-6 STMicroelectronics	MOSFET N-CH 60V 250A H2PAK	0
STP21N90K5 STMicroelectronics	MOSFET N-CH 900V 18.5A TO220-3	921
STW4N150 STMicroelectronics	MOSFET N-CH 1500V 4A TO247-3	883
STD130N6F7 STMicroelectronics	MOSFET N-CHANNEL 60V 80A DPAK	718
STL51N3LLH5 STMicroelectronics	MOSFET N-CH 30V 51A POWERFLAT	0
STD4NK80Z-1 STMicroelectronics	MOSFET N-CH 800V 3A IPAK	4816
STW26N60M2 STMicroelectronics	MOSFET N-CH 600V 20A TO247	0
STU9HN65M2 STMicroelectronics	MOSFET N-CH 650V 5.5A IPAK	0
STP23NM50N STMicroelectronics	MOSFET N-CH 500V 17A TO220-3	938
STH160N4LF6-2 STMicroelectronics	MOSFET N-CH 40V 120A H2PAK-2	0
STH240N75F3-6 STMicroelectronics	MOSFET N-CH 75V 180A H2PAK-6	1983
STL65N3LLH5 STMicroelectronics	MOSFET N-CH 30V 65A POWERFLAT	4670
STD100N3LF3 STMicroelectronics	MOSFET N-CH 30V 80A DPAK	407
STL16N60M2 STMicroelectronics	MOSFET N-CH 600V 8A POWERFLAT HV	0
STF13NM60ND STMicroelectronics	MOSFET N-CH 600V 11A TO220FP	926
STT6N3LLH6 STMicroelectronics	MOSFET N-CH 30V 6A SOT23-6	12200
STL260N3LLH6 STMicroelectronics	MOSFET N-CH 30V 260A POWERFLAT	551

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS