Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STH245N75F3-6 STMicroelectronics	MOSFET N-CH 75V 180A H2PAK-6	0
STP100NF04 STMicroelectronics	MOSFET N-CH 40V 120A TO220AB	0
SCT10N120H STMicroelectronics	SICFET N-CH 1200V 12A H2PAK-2	0
STF8N65M5 STMicroelectronics	MOSFET N-CH 650V 7A TO220FP	35
STP180N4F6 STMicroelectronics	MOSFET N-CHANNEL 40V 120A TO220	0
STF15N95K5 STMicroelectronics	MOSFET N-CH 950V 12A TO220FP	767
STL260N4F7 STMicroelectronics	MOSFET N-CH 40V 120A POWERFLAT	11
STL56N3LLH5 STMicroelectronics	MOSFET N-CH 30V 56A POWERFLAT	5098
STF28N65M2 STMicroelectronics	MOSFET N-CH 650V 20A TO220FP	0
STF25N60M2-EP STMicroelectronics	MOSFET N-CH 600V 18A TO220FP	925
STW58N65DM2AG STMicroelectronics	MOSFET N-CH 650V 48A TO247	577
STF42N60M2-EP STMicroelectronics	MOSFET N-CH 600V 34A TO220FP	4185
STD5NM60T4 STMicroelectronics	MOSFET N-CH 600V 5A DPAK	2767
STB150NF04 STMicroelectronics	MOSFET N-CH 40V 80A D2PAK	0
STD5N52U STMicroelectronics	MOSFET N-CH 525V 4.4A DPAK	0
STP110N55F6 STMicroelectronics	MOSFET N-CH 55V 110A TO220	0
STP27N60M2-EP STMicroelectronics	MOSFET N-CH 600V 20A TO220	0
STB80NF55L-06T4 STMicroelectronics	MOSFET N-CH 55V 80A D2PAK	831
STB57N65M5 STMicroelectronics	MOSFET N-CH 650V 42A D2PAK	1642
STF20N90K5 STMicroelectronics	MOSFET N-CH 900V 20A TO220FP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS