Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STW56N60M2 STMicroelectronics	MOSFET N-CH 600V 52A TO247	4236
STB18NF30 STMicroelectronics	MOSFET N-CH 330V 18A D2PAK	975
STWA58N65DM2AG STMicroelectronics	MOSFET N-CH 650V 48A TO247	0
STF5N95K5 STMicroelectronics	MOSFET N-CH 950V 3.5A TO220FP	945
STL6N3LLH6 STMicroelectronics	MOSFET N-CH 30V POWERFLAT	0
STP30NF10 STMicroelectronics	MOSFET N-CH 100V 35A TO220AB	1388
STP60NF06 STMicroelectronics	MOSFET N-CH 60V 60A TO220AB	7758
STW7N95K3 STMicroelectronics	MOSFET N-CH 950V 7.2A TO247-3	596
STD7ANM60N STMicroelectronics	MOSFET N-CH 600V 5A DPAK	300
STD4NK80ZT4 STMicroelectronics	MOSFET N-CH 800V 3A DPAK	0
STP7NK80Z STMicroelectronics	MOSFET N-CH 800V 5.2A TO220AB	605
STP150N3LLH6 STMicroelectronics	MOSFET N-CH 30V 80A TO220AB	0
STD3NK80ZT4 STMicroelectronics	MOSFET N-CH 800V 2.5A DPAK	1249
STB18NF25 STMicroelectronics	MOSFET N-CH 250V 17A D2PAK	1069
STU8NM50N STMicroelectronics	MOSFET N-CH 500V 5A IPAK	0
STW28N60DM2 STMicroelectronics	MOSFET N-CH 600V 21A TO247	602
STO67N60M6 STMicroelectronics	MOSFET N-CH 600V 34A TOLL	1730
STW19NM60N STMicroelectronics	MOSFET N-CH 600V 13A TO247	0
STD27N3LH5 STMicroelectronics	MOSFET N-CH 30V 27A DPAK	302
STD9NM40N STMicroelectronics	MOSFET N-CH 400V 5.6A DPAK	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS