Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Single

Part Number	Description / PDF	Quantity
STP11NM50N STMicroelectronics	MOSFET N-CH 500V 8.5A TO220AB	855
STP5NK80ZFP STMicroelectronics	MOSFET N-CH 800V 4.3A TO220FP	27
STD35NF06LT4 STMicroelectronics	MOSFET N-CH 60V 35A DPAK	16088
STF45N65M5 STMicroelectronics	MOSFET N-CH 650V 35A TO220FP	853
STP7N65M2 STMicroelectronics	MOSFET N-CH 650V 5A TO220	0
STW23N80K5 STMicroelectronics	MOSFET N-CH 800V 16A TO247	2753
STFI28N60M2 STMicroelectronics	MOSFET N-CH 600V 22A I2PAKFP	0
STP42N65M5 STMicroelectronics	MOSFET N-CH 650V 33A TO220-3	1221
STP4N150 STMicroelectronics	MOSFET N-CH 1500V 4A TO220AB	1228
SCTWA35N65G2VAG STMicroelectronics	TRANS SJT N-CH 650V 45A TO247	0
STS6NF20V STMicroelectronics	MOSFET N-CH 20V 6A 8SO	2013
STB23NM50N STMicroelectronics	MOSFET N-CH 500V 17A D2PAK	55
STP18NM80 STMicroelectronics	MOSFET N-CH 800V 17A TO220AB	252
STP57N65M5 STMicroelectronics	MOSFET N-CH 650V 42A TO220	2513
STL8P4LLF6 STMicroelectronics	MOSFET P-CH 40V POWERFLAT	3257
STW42N65M5 STMicroelectronics	MOSFET N-CH 650V 33A TO247-3	168
STW40N90K5 STMicroelectronics	MOSFET N-CH 900V 40A TO247	985
STL45N10F7AG STMicroelectronics	MOSFET N-CH 100V 18A POWERFLAT	3000
STFI7LN80K5 STMicroelectronics	MOSFET N-CH 800V 5A I2PAKFP	0
STFI8N80K5 STMicroelectronics	MOSFET N-CH 800V 6A I2PAKFP	0

Transistors - FETs, MOSFETs - Single

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) are voltage-controlled semiconductor devices that regulate current flow through an electric field. As fundamental components in modern electronics, they offer advantages such as high input impedance, low power consumption, and fast switching capabilities. Single discrete FETs/MOSFETs are widely used in power management, signal amplification, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Characteristics	Application Examples
Junction FET (JFET)	Voltage-controlled depletion mode operation, low noise	Low-noise amplifiers, analog switches
Enhancement Mode MOSFET	Normally-off device, requires positive V_GS to conduct	Power supplies, motor drives
Depletion Mode MOSFET	Normally-on device, requires negative V_GS to block	Radio frequency amplifiers, load switches
Insulated Gate Bipolar Transistor (IGBT)	Combines MOSFET input with bipolar output, high current capacity	High-power industrial equipment, electric vehicles

3. Structure and Composition

A typical MOSFET structure includes three terminals: Source, Gate, and Drain. The gate is insulated by a thin layer of silicon dioxide (SiO₂), forming a capacitive control interface. The channel between source and drain is formed in a silicon substrate. Advanced devices use materials like silicon carbide (SiC) or gallium nitride (GaN) for higher performance. Packaging options include TO-220, DPAK, and SOT-23 for different thermal and space requirements.

4. Key Technical Specifications

Parameter	Description and Importance
V_DS (Drain-Source Voltage)	Maximum voltage rating between drain and source; determines breakdown tolerance
I_D (Drain Current)	Maximum continuous current capacity; critical for power handling
R_DS(on)	On-state resistance; impacts conduction losses and efficiency
V_GS(th) (Threshold Voltage)	Voltage required to form channel; determines control signal compatibility
Q_G (Gate Charge)	Charge required for switching; affects switching speed and driver requirements
P_D (Power Dissipation)	Maximum power handling capability; dictates thermal management needs

5. Application Fields

Consumer Electronics: Mobile phone chargers, notebook power adapters
Industrial: Motor drives, uninterruptible power supplies (UPS)
Automotive: Electric vehicle (EV) battery management systems, HEV inverters
Telecommunications: Base station power amplifiers, optical network transceivers
Renewable Energy: Solar micro-inverters, wind turbine converters

6. Leading Manufacturers and Products

Manufacturer	Representative Product	Key Features
Texas Instruments	CSD18534Q5A	60V, 4.2m R_DS(on), automotive-grade
STMicroelectronics	STP55NF06	55A, 60V, high-speed switching
Infineon Technologies	IPB041N06N3	0.41 , 600V, TO-220 package
ON Semiconductor	NDS355AN	Depletion mode, 300mA, RF applications

7. Selection Guidelines

Key considerations include:

Voltage and current requirements under operating conditions
Thermal performance (R_DS(on), package thermal resistance)
Switching speed vs. conduction loss trade-off
Gate drive compatibility with control circuitry
Environmental factors (temperature, vibration, humidity)
Cost-performance balance for volume production

8. Industry Trends

Current trends include:

Adoption of wide bandgap materials (SiC, GaN) for higher efficiency
Advanced packaging technologies (double-sided cooling, copper clip)
Integration with gate drivers and protection circuits
Miniaturization through trench and shielded gate structures
Development of automotive-qualified devices for EVs and ADAS