Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI4808DY-T1-E3

SI4808DY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 5.7A 8SOIC

0

SI9945BDY-T1-GE3

SI9945BDY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 5.3A 8-SOIC

5000

SIA921EDJ-T4-GE3

SIA921EDJ-T4-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

0

SQJ200EP-T1_GE3

SQJ200EP-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 20A/60A PPAK SO

1229

SIZ998DT-T1-GE3

SIZ998DT-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 8-POWERPAIR

8473

SI4946CDY-T1-GE3

SI4946CDY-T1-GE3

Vishay / Siliconix

MOSFET N-CHAN DUAL 60V SO-8

881

SIA910EDJ-T1-GE3

SIA910EDJ-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 12V 4.5A SC-70-6

22614

SQ1912AEEH-T1_GE3

SQ1912AEEH-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 20V POWERPAK SC70-6

5630

SQ3985EV-T1_GE3

SQ3985EV-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CH 20V 3.9A 6TSOP

3236

SQ4946AEY-T1_GE3

SQ4946AEY-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 7A

99

SQJ912AEP-T1_GE3

SQJ912AEP-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 40V 30A PPAK SO-8

0

SI7216DN-T1-GE3

SI7216DN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 40V 6A PPAK 1212-8

2846

SQ4917EY-T1_BE3

SQ4917EY-T1_BE3

Vishay / Siliconix

MOSFET 2 P-CHANNEL 60V 8A 8SO

18

SQJ963EP-T1_GE3

SQJ963EP-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CH 60V POWERPAK SO8

14795

SI1026X-T1-GE3

SI1026X-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 0.305A SC89-6

53216

SI1553CDL-T1-GE3

SI1553CDL-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V SC70-6

18551

SIA938DJT-T1-GE3

SIA938DJT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 20-V (D-S) MOSFET

5910

SI4340CDY-T1-E3

SI4340CDY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 14.1A 14-SOIC

615

SQJ940EP-T1_GE3

SQJ940EP-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 40V 15A PPAK SO-8

5511

SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6

19230

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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