Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SQ4917EY-T1_GE3

SQ4917EY-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CHANNEL 60V 8A 8SO

946

SI7913DN-T1-GE3

SI7913DN-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 5A PPAK 1212-8

2506

SQJ264EP-T1_GE3

SQJ264EP-T1_GE3

Vishay / Siliconix

AUTOMOTIVE DUAL N-CHANNEL 60 V (

2886

SQJ208EP-T1_GE3

SQJ208EP-T1_GE3

Vishay / Siliconix

MOSFET DUAL N-CH AUTO 40V PP SO-

20

SQJ912BEP-T1_GE3

SQJ912BEP-T1_GE3

Vishay / Siliconix

MOSFET N-CH DUAL 40V PPSO-8L

1254

SI1926DL-T1-E3

SI1926DL-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 60V 0.37A SC-70-6

34011

SIA928DJ-T1-GE3

SIA928DJ-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V POWERPAK SC70-6

0

SIZ270DT-T1-GE3

SIZ270DT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 100-V (D-S) MOSFE

6045

SI5922DU-T1-GE3

SI5922DU-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 6A POWERPAK

5658

SI3951DV-T1-GE3

SI3951DV-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 2.7A 6-TSOP

0

SI4816BDY-T1-E3

SI4816BDY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 5.8A 8-SOIC

135

SI3993CDV-T1-GE3

SI3993CDV-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 30V 2.9A 6-TSOP

215

SI9926CDY-T1-E3

SI9926CDY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

3727

SI7997DP-T1-GE3

SI7997DP-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 30V 60A PPAK SO-8

13151

SI7900AEDN-T1-GE3

SI7900AEDN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 6A PPAK 1212-8

1

SQJ260EP-T1_GE3

SQJ260EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 60V POWERPAK SO8

2712

SI6913DQ-T1-GE3

SI6913DQ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 12V 4.9A 8-TSSOP

17968

SIZ254DT-T1-GE3

SIZ254DT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 70 V (D-S) MOSFET

50

SIZ904DT-T1-GE3

SIZ904DT-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 12A POWERPAIR

3000

SQ4961EY-T1_GE3

SQ4961EY-T1_GE3

Vishay / Siliconix

MOSFET DUAL P-CHAN 60V SO8

628

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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