Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI3552DV-T1-GE3

SI3552DV-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 30V 6-TSOP

6459

SQ3989EV-T1_GE3

SQ3989EV-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CH 30V 2.5A 6TSOP

194

SQ1922EEH-T1_GE3

SQ1922EEH-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 20V SC70-6

8495

SI1965DH-T1-BE3

SI1965DH-T1-BE3

Vishay / Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

3000

SI4946BEY-T1-E3

SI4946BEY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

1654

SIR770DP-T1-GE3

SIR770DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A PPAK SO-8

2055

SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 60A POWERPAIR

658

SI7922DN-T1-E3

SI7922DN-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 100V 1.8A 1212-8

88

SI4943CDY-T1-E3

SI4943CDY-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 20V 8A 8-SOIC

1863

SI1024X-T1-GE3

SI1024X-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 0.485A SC89-6

20931

SI5935CDC-T1-GE3

SI5935CDC-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 4A 1206-8

8569

SI4922BDY-T1-GE3

SI4922BDY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

1468

SI7236DP-T1-GE3

SI7236DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 60A PPAK SO-8

1472

SI4936ADY-T1-E3

SI4936ADY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

2500

SI4670DY-T1-GE3

SI4670DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

0

SI1967DH-T1-GE3

SI1967DH-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 1.3A SC70-6

23175

SI7923DN-T1-GE3

SI7923DN-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 30V 4.3A 1212-8

1406

SI7252DP-T1-GE3

SI7252DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 100V 36.7A PPAK 8SO

10846

SISF00DN-T1-GE3

SISF00DN-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CH 30V POWERPAK 12

6655

SI1016X-T1-GE3

SI1016X-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V SC89-6

54136

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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