Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SI4532CDY-T1-GE3

SI4532CDY-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 30V 6A 8-SOIC

9784

SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

Vishay / Siliconix

MOSFET N-CHAN 60V

725

SI7223DN-T1-GE3

SI7223DN-T1-GE3

Vishay / Siliconix

MOSFET DUAL P-CHAN POWERPAK 1212

4994

SIRB40DP-T1-GE3

SIRB40DP-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

3719

SI7212DN-T1-E3

SI7212DN-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

2596

SI7962DP-T1-E3

SI7962DP-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 40V 7.1A PPAK SO-8

0

SI7913DN-T1-E3

SI7913DN-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 20V 5A 1212-8

2283

SIZ988DT-T1-GE3

SIZ988DT-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V 8-POWERPAIR

356

SIZ720DT-T1-GE3

SIZ720DT-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 16A POWERPAIR

0

SI4948BEY-T1-GE3

SI4948BEY-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

1298

SI4228DY-T1-GE3

SI4228DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

2500

SI3932DV-T1-GE3

SI3932DV-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 3.7A 6-TSOP

105987

SIA923AEDJ-T1-GE3

SIA923AEDJ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6L

21000

SIZ902DT-T1-GE3

SIZ902DT-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

2537

SQ1912EH-T1_GE3

SQ1912EH-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 20V 800MA SC70-6

1110

SI4948BEY-T1-E3

SI4948BEY-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

58

SI8900EDB-T2-E1

SI8900EDB-T2-E1

Vishay / Siliconix

MOSFET 2N-CH 20V 5.4A 10-MFP

0

SI4900DY-T1-GE3

SI4900DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 5.3A 8-SOIC

52

SI4946BEY-T1-GE3

SI4946BEY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

444

SQJ204EP-T1_GE3

SQJ204EP-T1_GE3

Vishay / Siliconix

MOSFET DUAL N-CH 12V PPAK SO-8L

46

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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