Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SQJQ900E-T1_GE3

SQJQ900E-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK8X8

0

SQJQ910EL-T1_GE3

SQJQ910EL-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 100V POWERPAK8X8

0

SI4804CDY-T1-GE3

SI4804CDY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

0

SI4204DY-T1-GE3

SI4204DY-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 20V 19.8A 8-SOIC

7044

SQJB40EP-T1_GE3

SQJB40EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 40V POWERPAK SO8

0

SIA921EDJ-T1-GE3

SIA921EDJ-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6

5972

SI3552DV-T1-E3

SI3552DV-T1-E3

Vishay / Siliconix

MOSFET N/P-CH 30V 6TSOP

4197

SQJ992EP-T1_GE3

SQJ992EP-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 60V 15A POWERPAKSO8

3000

SI4559ADY-T1-E3

SI4559ADY-T1-E3

Vishay / Siliconix

MOSFET N/P-CH 60V 5.3A 8-SOIC

1000

SQ3987EV-T1_GE3

SQ3987EV-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CHANNEL 30V 3A 6TSOP

4398

SIS990DN-T1-GE3

SIS990DN-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 100V 12.1A 1212-8

8714

SQJ570EP-T1_GE3

SQJ570EP-T1_GE3

Vishay / Siliconix

MOSFET N/P-CH 100V POWERPAK SO8

2755

SIZ328DT-T1-GE3

SIZ328DT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CHAN 25V POWERPAIR

5960

SIZ256DT-T1-GE3

SIZ256DT-T1-GE3

Vishay / Siliconix

DUAL N-CHANNEL 70 V (D-S) MOSFET

0

SI4963BDY-T1-GE3

SI4963BDY-T1-GE3

Vishay / Siliconix

MOSFET 2P-CH 20V 4.9A 8SOIC

0

SI4618DY-T1-E3

SI4618DY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

2

SI1967DH-T1-E3

SI1967DH-T1-E3

Vishay / Siliconix

MOSFET 2P-CH 20V 1.3A SC70-6

3616

SI7956DP-T1-GE3

SI7956DP-T1-GE3

Vishay / Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

6935

SI7972DP-T1-GE3

SI7972DP-T1-GE3

Vishay / Siliconix

MOSFET 2 N-CH 30V POWERPAK SO8

31

SIZ350DT-T1-GE3

SIZ350DT-T1-GE3

Vishay / Siliconix

MOSFET DUAL N-CHAN 30V POWERPAIR

6004

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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