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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
NTMD2C02R2SG

NTMD2C02R2SG

P-CHANNEL POWER MOSFET

2500
SFR9230BTMAM002

SFR9230BTMAM002

5.4A, 200V, 0.8OHM, P CHANNEL ,

22500
AO4828

AO4828

Alpha and Omega Semiconductor, Inc.

MOSFET 2N-CH 60V 4.5A 8-SOIC

0
CSD87384M

CSD87384M

Texas Instruments

MOSFET 2N-CH 30V 30A 5PTAB

2500
FS70UMJ-06F

FS70UMJ-06F

70A, 60V, N-CHANNEL MOSFET

288
IRFR1109A

IRFR1109A

PFET, 4.7A I(D), 100V, 0.54OHM,

2500
AO6608

AO6608

Alpha and Omega Semiconductor, Inc.

MOSFET ARRAY N/P-CH 30/20V 6TSOP

30922
HIP0063AB

HIP0063AB

HEX LOW SIDE MOSFET DRIVER W/SER

1148
NVMFD5C470NWFT1G

NVMFD5C470NWFT1G

Sanyo Semiconductor/ON Semiconductor

40V 11.7 MOHM T8 S08FL DU

7500
DMN2300UFL4-7

DMN2300UFL4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 20V 2.11A 6DFN

90000
IRF432

IRF432

HEXFET POWER MOSFETS

1192
AOC2870

AOC2870

Alpha and Omega Semiconductor, Inc.

MOSFET 2 N-CHANNEL 4DFN

0
APTM50HM75STG

APTM50HM75STG

Roving Networks / Microchip Technology

MOSFET 4N-CH 500V 46A SP4

8
PHK31NQ03LT

PHK31NQ03LT

Nexperia

POWER FIELD-EFFECT TRANSISTOR, 3

0
SI5513CDC-T1-GE3

SI5513CDC-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 20V 4A 1206-8

6819
QS8M12TCR

QS8M12TCR

ROHM Semiconductor

MOSFET N/P-CH 30V 4A TSMT8

0
FDZ2554PZ

FDZ2554PZ

P-CHANNEL POWER MOSFET

11960
BUK7K5R6-30E,115

BUK7K5R6-30E,115

Nexperia

MOSFET 2N-CH 30V 40A LFPAK56D

1500
SQ1922AEEH-T1_GE3

SQ1922AEEH-T1_GE3

Vishay / Siliconix

MOSFET N-CH DUAL 20V .85A SOT-36

2290
FDD10AN06A0Q

FDD10AN06A0Q

1-ELEMENT, N-CHANNEL

1084

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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