Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
SSM6N44FU,LF

SSM6N44FU,LF

Toshiba Electronic Devices and Storage Corporation

SMALL SIGNAL MOSFET N-CH X 2 VDS

5553

NVMFD5852NLT1G

NVMFD5852NLT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 40V 15A SO8FL

1194

SI3552DV-T1-GE3

SI3552DV-T1-GE3

Vishay / Siliconix

MOSFET N/P-CH 30V 6-TSOP

6459

SP8M51TB1

SP8M51TB1

ROHM Semiconductor

MOSFET N/P-CH 100V 3A/2.5A SOP8

25

ZXMHC6A07T8TA

ZXMHC6A07T8TA

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N/2P-CH 60V SM8

7139

ALD114813PCL

ALD114813PCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

0

2SK1626-E

2SK1626-E

Renesas Electronics America

5A, 450V, N-CHANNEL MOSFET

709

DMN2004DWKQ-7

DMN2004DWKQ-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2NCH 20V 540MA SOT363

0

APTC60AM18SCG

APTC60AM18SCG

Roving Networks / Microchip Technology

MOSFET 2N-CH 600V 143A SP6

1

NX138AKSF

NX138AKSF

Nexperia

MOSFET 2 N-CH 60V 170MA SOT363

0

NVMFD6H840NLT1G

NVMFD6H840NLT1G

Sanyo Semiconductor/ON Semiconductor

T8 80V LL SO8FL DS

3701500

ALD110800APCL

ALD110800APCL

Advanced Linear Devices, Inc.

MOSFET 4N-CH 10.6V 16DIP

47

SQ3989EV-T1_GE3

SQ3989EV-T1_GE3

Vishay / Siliconix

MOSFET 2 P-CH 30V 2.5A 6TSOP

194

SQ1922EEH-T1_GE3

SQ1922EEH-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 20V SC70-6

8495

NTGD3133PT1G

NTGD3133PT1G

SMALL SIGNAL N-CHANNEL MOSFET

9000

HUFA76413DK8T

HUFA76413DK8T

N-CHANNEL POWER MOSFET

0

FDMD82100

FDMD82100

SMALL SIGNAL FIELD-EFFECT TRANSI

4453

FDG6306P

FDG6306P

SMALL SIGNAL FIELD-EFFECT TRANSI

6000

FDMA1024NZ

FDMA1024NZ

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 20V 5A 6MICROFET

79891

UT6JA2TCR

UT6JA2TCR

ROHM Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

4010

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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