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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
MCH6662-TL-W

MCH6662-TL-W

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH 20V 2A MCPH6

5905
APTC60AM35SCTG

APTC60AM35SCTG

Roving Networks / Microchip Technology

MOSFET 2N-CH 600V 72A SP4

0
2SK3355-S-AZ

2SK3355-S-AZ

Renesas Electronics America

SWITCHING N-CHANNEL POWER MOSFET

1960
CPH3407-TL-E-ON

CPH3407-TL-E-ON

N-CHANNEL SILICON MOSFET

12000
SSM6N36FE,LM

SSM6N36FE,LM

Toshiba Electronic Devices and Storage Corporation

MOSFET 2N-CH 20V 0.5A ES6

0
US6M11TR

US6M11TR

ROHM Semiconductor

MOSFET N/P-CH 20V/12V TUMT6

10334
DMN62D0UDW-13

DMN62D0UDW-13

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 60V 0.35A SOT363

0
AO4629

AO4629

Alpha and Omega Semiconductor, Inc.

MOSFET N/P-CH 30V 6A/5.5A 8SOIC

4163
DMC2057UVT-13

DMC2057UVT-13

Zetex Semiconductors (Diodes Inc.)

MOSFET BVDSS: 8V-24V TSOT26 T&R

0
SQ4940AEY-T1_GE3

SQ4940AEY-T1_GE3

Vishay / Siliconix

MOSFET 2N-CH 40V 8A 8SOIC

226
SQJ952EP-T1_GE3

SQJ952EP-T1_GE3

Vishay / Siliconix

MOSFET 2 N-CH 60V POWERPAK SO8

0
NTJD1155LT1G

NTJD1155LT1G

Sanyo Semiconductor/ON Semiconductor

MOSFET N/P-CH 8V 1.3A SOT363

0
NTLJD3119CTBG

NTLJD3119CTBG

Sanyo Semiconductor/ON Semiconductor

MOSFET N/P-CH 20V 6WDFN

713
SQ4282EY-T1_BE3

SQ4282EY-T1_BE3

Vishay / Siliconix

MOSFET 2 N-CHANNEL 30V 8A 8SOIC

2471
FW216A-TL-2W

FW216A-TL-2W

4.5A, 35V, 0.064OHM, 2-ELEMENT,

212500
FDC6302P

FDC6302P

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 25V 120MA SSOT6

0
SI4904DY-T1-E3

SI4904DY-T1-E3

Vishay / Siliconix

MOSFET 2N-CH 40V 8A 8-SOIC

3702
QS8K13TCR

QS8K13TCR

ROHM Semiconductor

MOSFET 2N-CH 30V 6A TSMT8

255
CMRDM3575 TR PBFREE

CMRDM3575 TR PBFREE

Central Semiconductor

MOSFET N/P-CH 20V SOT963

2147483647
ALD110902PAL

ALD110902PAL

Advanced Linear Devices, Inc.

MOSFET 2N-CH 10.6V 8DIP

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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