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Transistors - FETs, MOSFETs - Arrays

Image Part Number Description / PDF Quantity Rfq
CSD85301Q2

CSD85301Q2

Texas Instruments

MOSFET 2N-CH 20V 5A 6WSON

8272
EFC4621R-TR

EFC4621R-TR

Sanyo Semiconductor/ON Semiconductor

MOSFET 2N-CH EFCP

0
ZXMN3AMCTA

ZXMN3AMCTA

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH 30V 2.9A DFN

41
DMP2004DMK-7

DMP2004DMK-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2P-CH 20V 0.55A SOT-26

0
FDY1002PZ

FDY1002PZ

Sanyo Semiconductor/ON Semiconductor

MOSFET 2P-CH 20V 830MA SOT563F

940748000
CCS020M12CM2

CCS020M12CM2

Wolfspeed - a Cree company

MOSFET 6N-CH 1200V 29.5A MODULE

0
QH8M22TCR

QH8M22TCR

ROHM Semiconductor

QH8M22 IS THE HIGH RELIABILITY T

5680
MSCSM120AM027CT6AG

MSCSM120AM027CT6AG

Roving Networks / Microchip Technology

PM-MOSFET-SIC-SBD~-SP6C

3
FMM150-0075X2F

FMM150-0075X2F

Wickmann / Littelfuse

MOSFET 2N-CH 75V 120A I4-PAC-5

28
DMN2023UCB4-7

DMN2023UCB4-7

Zetex Semiconductors (Diodes Inc.)

MOSFET 2N-CH X1-WLB1818-4

2695
CSD87330Q3D

CSD87330Q3D

Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

35635
IRF7306TR

IRF7306TR

IR (Infineon Technologies)

MOSFET 2P-CH 30V 3.6A 8-SOIC

16000
FC8V33030L

FC8V33030L

Panasonic

MOSFET 2N-CH 33V 6.5A WMINI8

0
ALD310700APCL

ALD310700APCL

Advanced Linear Devices, Inc.

MOSFET 4 P-CH 8V 16DIP

40
FDS3601

FDS3601

N-CHANNEL POWER MOSFET

56702
MSCSM120AM02CT6LIAG

MSCSM120AM02CT6LIAG

Roving Networks / Microchip Technology

PM-MOSFET-SIC-SBD~-SP6C LI

3
MIC5015BMTR

MIC5015BMTR

Roving Networks / Microchip Technology

LOW-COST HIGH OR LOW-SIDE MOSFET

7355
DMC4029SSD-13

DMC4029SSD-13

Zetex Semiconductors (Diodes Inc.)

MOSFET N/P-CH 40V 7A/5.1A 8SO

0
APTM50AM35FTG

APTM50AM35FTG

Roving Networks / Microchip Technology

MOSFET 2N-CH 500V 99A SP4

0
PMDPB30XNZ

PMDPB30XNZ

Nexperia

MOSFET 2N-CH 20V 6HUSON

0

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
JFET ArrayLow noise, high input impedanceAnalog switches, RF amplifiers
MOSFET Array (Enhancement)High switching speed, low on-resistancePower supplies, motor drivers
MOSFET Array (Depletion)Normally-on behavior, high durabilityLevel shifters, analog circuits
HEMT ArrayHigh electron mobility, microwave performanceSatellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

ParameterDescriptionImportance
RDS(on)On-state resistanceImpacts conduction loss and efficiency
VDS(max)Max drain-source voltageDetermines voltage rating
ID(max)Max continuous drain currentDefines current handling capability
QgGate chargeAffects switching speed and driver requirements
Thermal ResistanceJunction-to-ambient resistanceCrucial for thermal management

5. Application Fields

  • Consumer Electronics: Smartphone power management, audio amplifiers
  • Automotive: EV battery management systems, 48V DC-DC converters
  • Industrial: PLCs, motor drives, welding equipment
  • Telecommunications: Base station RF amplifiers, optical network transceivers
  • Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductsKey Features
Infineon TechnologiesBTS724GXSmart power MOSFET array with diagnostic functions
STMicroelectronicsIPD90N03S4-01High-side switch with 90A rating
ON SemiconductorNVN4080Automotive-qualified 80V intelligent power array
NexperiaPMBT2369High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low RDS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies

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