Transistors - FETs, MOSFETs

Transistors - FETs, MOSFETs - Arrays

Part Number	Description / PDF	Quantity
RM3075S8(N) Rectron USA	MOSFET N&P-CH 30V 6.8A/4.6A 8SOP	0
ISL6605CB-TS2495 Intersil (Renesas Electronics America)	HALF BRIDGE BASED MOSFET DRIVER,	2500
FF23MR12W1M1B11BOMA1 IR (Infineon Technologies)	MOSFET 2 N-CH 1200V 50A MODULE	0
DMN63D8LDW-7 Zetex Semiconductors (Diodes Inc.)	MOSFET 2N-CH 30V 0.22A SOT363	0
IRFI4212H-117P IR (Infineon Technologies)	MOSFET 2N-CH 100V 11A TO220-5	0
2N7002BKV,115 Nexperia	MOSFET 2N-CH 60V 340MA SOT666	333926
FS30KM-3#B00 Renesas Electronics America	N-CHANNEL , 150V, 30A	15128
SH8K15TB1 ROHM Semiconductor	MOSFET 2N-CH 30V 9A 8SOP	0
SI5504BDC-T1-E3 Vishay / Siliconix	MOSFET N/P-CH 30V 4A 1206-8	35359
FDG1024NZ Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 20V 1.2A SC70-6	0
TPC8408,LQ(S Toshiba Electronic Devices and Storage Corporation	MOSFET N/P-CH 40V 6.1A/5.3A 8SOP	0
BSL207NL6327 IR (Infineon Technologies)	SMALL SIGNAL N-CHANNEL MOSFET	3000
SI1922EDH-T1-GE3 Vishay / Siliconix	MOSFET 2N-CH 20V 1.3A SOT-363	1539
BSL806NL6327 IR (Infineon Technologies)	SMALL SIGNAL N-CHANNEL MOSFET	3921
NVMFD5C446NLT1G Sanyo Semiconductor/ON Semiconductor	MOSFET 2N-CH 40V 145A S08FL	1273
MCH6664-TL-W Sanyo Semiconductor/ON Semiconductor	MOSFET 2P-CH 30V 1.5A SOT363	0
TQM250NB06DCR RLG TSC (Taiwan Semiconductor)	60V, 30A, DUAL N-CHANNEL POWER M	5000
SI5504BDC-T1-GE3 Vishay / Siliconix	MOSFET N/P-CH 30V 4A 1206-8	17271
NX7002BKW,115 Nexperia	0.24A, 60V, N CHANNEL MOSFET, SC	0
TPD3215M Transphorm	GANFET 2N-CH 600V 70A MODULE	22

Transistors - FETs, MOSFETs - Arrays

1. Overview

Field-Effect Transistors (FETs) and Metal-Oxide-Semiconductor FETs (MOSFETs) arrays are multi-transistor packages integrating multiple discrete FET/MOSFET devices in a single housing. These arrays provide compact solutions for high-density electronic systems while maintaining individual transistor functionality. They play a critical role in modern electronics by enabling efficient power management, signal processing, and switching applications across industries.

2. Main Types and Functional Classification

Type	Functional Features	Application Examples
JFET Array	Low noise, high input impedance	Analog switches, RF amplifiers
MOSFET Array (Enhancement)	High switching speed, low on-resistance	Power supplies, motor drivers
MOSFET Array (Depletion)	Normally-on behavior, high durability	Level shifters, analog circuits
HEMT Array	High electron mobility, microwave performance	Satellite communication, radar systems

3. Structure and Composition

Typical FET/MOSFET arrays consist of: - Silicon/compound semiconductor die with gate-source-drain terminals - Common packaging formats: DIP, SIP, QFN, or custom lead frames - Monolithic integration with shared substrate or isolation trenches - Gate oxide layers (1-10nm) and metal interconnects - Advanced variants use trench/gate-all-around structures for improved performance

4. Key Technical Specifications

Parameter	Description	Importance
R_DS(on)	On-state resistance	Impacts conduction loss and efficiency
V_DS(max)	Max drain-source voltage	Determines voltage rating
I_D(max)	Max continuous drain current	Defines current handling capability
Q_g	Gate charge	Affects switching speed and driver requirements
Thermal Resistance	Junction-to-ambient resistance	Crucial for thermal management

5. Application Fields

Consumer Electronics: Smartphone power management, audio amplifiers
Automotive: EV battery management systems, 48V DC-DC converters
Industrial: PLCs, motor drives, welding equipment
Telecommunications: Base station RF amplifiers, optical network transceivers
Renewable Energy: Solar inverters, energy storage systems

6. Leading Manufacturers and Products

Manufacturer	Representative Products	Key Features
Infineon Technologies	BTS724GX	Smart power MOSFET array with diagnostic functions
STMicroelectronics	IPD90N03S4-01	High-side switch with 90A rating
ON Semiconductor	NVN4080	Automotive-qualified 80V intelligent power array
Nexperia	PMBT2369	High-speed JFET array for RF applications

7. Selection Recommendations

Key considerations: - Electrical requirements (voltage, current, frequency) - Thermal management capability (package thermal performance) - Integration level (number of transistors per package) - Cost vs. performance trade-offs - Automotive/industrial grade requirements (temperature range, reliability) - Example: For EV onboard chargers, select SiC MOSFET arrays with >650V rating and low R_DS(on)

8. Industry Trends

Current development trends include: - Transition to wide bandgap materials (SiC, GaN) for higher efficiency - 3D packaging integration for reduced parasitic inductance - Intelligent power arrays with embedded sensors - Market growth driven by EVs, 5G infrastructure, and renewable energy systems - Miniaturization through chip-scale packaging technologies