Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTA144GUAT106

DTA144GUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

2425

DTC143XU3T106

DTC143XU3T106

ROHM Semiconductor

DTC143XU3 IS AN DIGITAL TRANSIST

0

DTA114ECAHZGT116

DTA114ECAHZGT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

11940

DTC144TUAT106

DTC144TUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

2476

DTC044TUBTL

DTC044TUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.2W UMT3F

3000

DTC114YUBHZGTL

DTC114YUBHZGTL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

5214

DTC115EU3HZGT106

DTC115EU3HZGT106

ROHM Semiconductor

DTC115EU3HZG IS AN DIGITAL TRANS

2875

DTC143XEBTL

DTC143XEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

0

DTC124XU3T106

DTC124XU3T106

ROHM Semiconductor

DTC124XU3 IS AN DIGITAL TRANSIST

2500

DTA143XMFHAT2L

DTA143XMFHAT2L

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (CORRESPO

272

DTD513ZMT2L

DTD513ZMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

0

DTA114YKAT146

DTA114YKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

0

DTB113EKT146

DTB113EKT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

2263

DTA124EMT2L

DTA124EMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

5284

DTC044TEBTL

DTC044TEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.15W SC89

2822

DTC114YMFHAT2L

DTC114YMFHAT2L

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (AEC-Q101

6747

DTA123YCAT116

DTA123YCAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

2720

DTA144WUAT106

DTA144WUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

2680

DTA143ZUBHZGTL

DTA143ZUBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

2500

DTA014TMT2L

DTA014TMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 50V VMT3

2070

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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