Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTD523YETL

DTD523YETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

1853

DTA115GKAT146

DTA115GKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

0

DTC144EEBHZGTL

DTC144EEBHZGTL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

2440

DTA124EEBTL

DTA124EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2021

DTC044TMT2L

DTC044TMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

7350

DTC013ZEBTL

DTC013ZEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 0.15W SC89

332

DTC123EMT2L

DTC123EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

1175

DTA114EKAT146

DTA114EKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

29870

DTD743EETL

DTD743EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

2981

DTC023EMT2L

DTC023EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

7262

DTA014YUBTL

DTA014YUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.2W UMT3F

3407

DTC115TUAT106

DTC115TUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

1449

DTA114GKAT146

DTA114GKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

5890

DTA144TMT2L

DTA144TMT2L

ROHM Semiconductor

TRANS PREBIAS PNP 150MW VMT3

8000

DTA114YEBTL

DTA114YEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 0.15W EMT3

0

DTC143XETL

DTC143XETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

2819

DTC115TKAT146

DTC115TKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

2916

DTA114TUAT106

DTA114TUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

7665

DTA043EEBTL

DTA043EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

1625

DTA114EEFRATL

DTA114EEFRATL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2790

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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