Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC125TUAT106

DTC125TUAT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

26990

DTA114YU3T106

DTA114YU3T106

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

1710

DTC123EKAT146

DTC123EKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

9013

DTC123YU3T106

DTC123YU3T106

ROHM Semiconductor

DTC123YU3 IS AN DIGITAL TRANSIST

1600

DTC015TUBTL

DTC015TUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V UMT3F

3000

DTC043XMT2L

DTC043XMT2L

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (WITH BUI

8000

DTC113ZEFRATL

DTC113ZEFRATL

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

3000

DTA143XUAT106

DTA143XUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

540

DTC114TCAHZGT116

DTC114TCAHZGT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2990

DTC614TKT146

DTC614TKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

4370

DTC114EETL

DTC114EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

247

DTA143TMFHAT2L

DTA143TMFHAT2L

ROHM Semiconductor

DIGITAL TRANSISTOR PNP 50V 100MA

3989

DTA114EUBHZGTL

DTA114EUBHZGTL

ROHM Semiconductor

PNP DIGITAL TRANSISTOR (WITH BUI

1952

DTB143ECHZGT116

DTB143ECHZGT116

ROHM Semiconductor

-500MA/-50V DIGITAL TRANSISTOR (

565

DTC114TCAT116

DTC114TCAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

3533

DTC114ECAT116

DTC114ECAT116

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SST3

597

DTC123EETL

DTC123EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

542

DTC124XEFRATL

DTC124XEFRATL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (AEC-Q101

0

DTC123YU3HZGT106

DTC123YU3HZGT106

ROHM Semiconductor

DTC123YU3HZG IS AN DIGITAL TRANS

7785

DTC013ZMT2L

DTC013ZMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 0.15W VMT3

47612

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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