Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC024XUBTL

DTC024XUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 0.2W UMT3F

1486

DTA113ZMT2L

DTA113ZMT2L

ROHM Semiconductor

DTA113ZM IS AN DIGITAL TRANSISTO

7975

DTA114ECAT116

DTA114ECAT116

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SST3

0

DTC144ECAT116

DTC144ECAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

2475

DTB143EKT146

DTB143EKT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

287

DTC123EU3T106

DTC123EU3T106

ROHM Semiconductor

DTC123EU3 IS AN DIGITAL TRANSIST

0

DTC124XKAT146

DTC124XKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

461

DTA113ZKAT146

DTA113ZKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

5

DTA123YU3T106

DTA123YU3T106

ROHM Semiconductor

DTA123YU3 IS AN DIGITAL TRANSIST

2630

DTC143ZETL

DTC143ZETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

0

DTC015EUBTL

DTC015EUBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.2W UMT3F

1665

DTC015EEBTL

DTC015EEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.15W SC89

3255

DTC314TKT146

DTC314TKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

0

DTC143XCAT116

DTC143XCAT116

ROHM Semiconductor

NPN 100MA 50V DIGITAL TRANSISTOR

6979

DTB543EETL

DTB543EETL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2350

DTD143EKT146

DTD143EKT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

9772

DTA143ECAT116

DTA143ECAT116

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

1822

DTC143XKAT146

DTC143XKAT146

ROHM Semiconductor

TRANS PREBIAS NPN 200MW SMT3

6069

DTA123JUBTL

DTA123JUBTL

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3F

2644

DTC114WETL

DTC114WETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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