Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTC115TE,115

PDTC115TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

221975

PDTA143ZE,115

PDTA143ZE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

21000

PDTA115TE,115

PDTA115TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

8391

PDTA123JE,115

PDTA123JE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

335888

PDTA115TMB,315

PDTA115TMB,315

NXP Semiconductors

NOW NEXPERIA PDTA115TMB - SMALL

159975

PDTC123TE,115

PDTC123TE,115

NXP Semiconductors

PDTC123TE - 50V, NPN, SC-75

0

PDTC143ZE,115

PDTC143ZE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

32118

PDTC114EK,115

PDTC114EK,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

273000

PDTA144TE115

PDTA144TE115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

90000

PDTA124EK,115

PDTA124EK,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTC123YE,115

PDTC123YE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

35099

PDTA114TE,115-NXP

PDTA114TE,115-NXP

NXP Semiconductors

0.1A, 50V, PNP

810000

PDTA144VMB,315

PDTA144VMB,315

NXP Semiconductors

NOW NEXPERIA PDTA144VMB - SMALL

130000

PDTA124XE,115

PDTA124XE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

51000

PDTC144WMB,315

PDTC144WMB,315

NXP Semiconductors

NOW NEXPERIA PDTC144WMB - SMALL

150000

PDTA123YE,115

PDTA123YE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

20262

PDTC144EE,115

PDTC144EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

1876000

PDTC124EE,115

PDTC124EE,115

NXP Semiconductors

0.1A, 50V, NPN

450000

PDTC143EQAZ

PDTC143EQAZ

NXP Semiconductors

PDTC143/114/124/144EQA SERIES -

150000

PDTA144EE,115

PDTA144EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

284582

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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