Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTD123YQAZ

PDTD123YQAZ

NXP Semiconductors

50 V, 500MA NPN RESISTOR-EQUIPPE

5000

PDTC144EE,135

PDTC144EE,135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

45889

PDTA113EE,115

PDTA113EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

103000

PDTA123TE,115

PDTA123TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

27000

PDTC114YM315

PDTC114YM315

NXP Semiconductors

NOW NEXPERIA PDTC114YM - SMALL S

0

PDTA124TE,115

PDTA124TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTB143EQA147

PDTB143EQA147

NXP Semiconductors

PDTB143EQA SMALL SIGNAL FET

13950

PDTA144WK,115

PDTA144WK,115

NXP Semiconductors

TRANS PREBIAS PNP 250MW SMT3

0

PBRN123YS,126

PBRN123YS,126

NXP Semiconductors

TRANS PREBIAS NPN 0.7W TO92-3

0

PDTC144WS,126

PDTC144WS,126

NXP Semiconductors

TRANS PREBIAS NPN 500MW TO92-3

0

PDTD113ZK,115

PDTD113ZK,115

NXP Semiconductors

TRANS PREBIAS NPN 250MW SMT3

0

PDTA123ES,126

PDTA123ES,126

NXP Semiconductors

TRANS PREBIAS PNP 500MW TO92-3

0

PDTA143XE,115

PDTA143XE,115

NXP Semiconductors

TRANS PREBIAS PNP 150MW SC75

0

PDTC114YK,115

PDTC114YK,115

NXP Semiconductors

TRANS PREBIAS NPN 250MW SMT3

0

PDTC144EK,115

PDTC144EK,115

NXP Semiconductors

TRANS PREBIAS NPN 250MW SMT3

0

PDTA113ES,126

PDTA113ES,126

NXP Semiconductors

TRANS PREBIAS PNP 500MW TO92-3

0

PDTA144TS,126

PDTA144TS,126

NXP Semiconductors

TRANS PREBIAS PNP 500MW TO92-3

0

PDTC123EEF,115

PDTC123EEF,115

NXP Semiconductors

TRANS PREBIAS NPN 250MW SC89

0

PDTA144VK,115

PDTA144VK,115

NXP Semiconductors

TRANS PREBIAS PNP 250MW SMT3

0

PDTA144EK,115

PDTA144EK,115

NXP Semiconductors

TRANS PREBIAS PNP 250MW SMT3

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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