Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTC114YE,135

PDTC114YE,135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

30000

PDTC143TE,115

PDTC143TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

59376

PDTA124EE,115

PDTA124EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

159510

PDTA114EE,115

PDTA114EE,115

NXP Semiconductors

0.1A, 50V, PNP

0

PDTC123YMB,315

PDTC123YMB,315

NXP Semiconductors

PDTC123Y - NPN RESISTOR-EQUIPPED

0

PDTC144WM,315

PDTC144WM,315

NXP Semiconductors

PDTC144W - UPN RESISTOR-EQUIPPED

120000

PDTC144TM,315

PDTC144TM,315

NXP Semiconductors

PDTC144T - NPN RESISTOR-EQUIPPED

50000

PDTC114TE,115

PDTC114TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

10380

PDTA113EMB,315

PDTA113EMB,315

NXP Semiconductors

NOW NEXPERIA PDTA113EMB - SMALL

140000

PDTC143EE,115

PDTC143EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

175447

PDTC123TMB,315

PDTC123TMB,315

NXP Semiconductors

NOW NEXPERIA PDTC123TMB - SMALL

100000

PDTC123JE,115

PDTC123JE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTC123TT,215

PDTC123TT,215

NXP Semiconductors

NOW NEXPERIA PDTC123TT - SMALL S

132670

PDTA115EE,115

PDTA115EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

96437

PDTB143EUF

PDTB143EUF

NXP Semiconductors

NOW NEXPERIA PDTB143EUF - SMALL

46958

PDTC144VE,115

PDTC144VE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

27208

PDTA123EE,115

PDTA123EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

89239

PDTC115EMB,315

PDTC115EMB,315

NXP Semiconductors

PDTC115E - NPN RESISTOR-EQUIPPED

189658

PDTC143ET,235

PDTC143ET,235

NXP Semiconductors

PDTC143E - NPN RESISTOR-EQUIPPED

470000

PDTD113EQAZ

PDTD113EQAZ

NXP Semiconductors

PDTD113 - 50V, 500 MA UPN RESIST

65000

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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