Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTA115EMB,315

PDTA115EMB,315

NXP Semiconductors

NOW NEXPERIA PDTA115EMB - SMALL

199970

PDTC115EE,115

PDTC115EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

978434

PDTA124XMB,315

PDTA124XMB,315

NXP Semiconductors

NOW NEXPERIA PDTA124XMB - SMALL

176468

PDTA143TMB,315

PDTA143TMB,315

NXP Semiconductors

NOW NEXPERIA PDTA143TMB - SMALL

129900

PDTA113ZE,115

PDTA113ZE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

24000

PDTA114EE,115-NXP

PDTA114EE,115-NXP

NXP Semiconductors

0.1A, 50V, PNP

1351589

PDTA144EMB,315

PDTA144EMB,315

NXP Semiconductors

NOW NEXPERIA PDTA144EMB - SMALL

200000

PDTC114YE,115

PDTC114YE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

90969

PDTA143EE,115

PDTA143EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

19439

PDTC144TE,115

PDTC144TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

987200

PDTC123EE,115

PDTC123EE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTC114EE,115

PDTC114EE,115

NXP Semiconductors

0.1A, 50V, NPN, SC-75

0

PDTC114EE,115-NXP

PDTC114EE,115-NXP

NXP Semiconductors

0.1A, 50V, NPN, SC-75

537551

PDTC144WE,115

PDTC144WE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

57200

PDTA114YE,115

PDTA114YE,115

NXP Semiconductors

PDTA114 - 0.1A, 50V, PNP

63226

PDTA114TE,115

PDTA114TE,115

NXP Semiconductors

0.1A, 50V, PNP

0

PDTA144WMB,315

PDTA144WMB,315

NXP Semiconductors

NOW NEXPERIA PDTA144WMB - SMALL

149782

PDTA144VE,115

PDTA144VE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

27000

PDTA144WE,115

PDTA144WE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTA143TE,115

PDTA143TE,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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