Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTB113ET,215

PDTB113ET,215

Nexperia

TRANS PREBIAS PNP 50V TO236AB

0

PDTC143ZT,215

PDTC143ZT,215

Nexperia

TRANS PREBIAS NPN 250MW TO236AB

9801

PDTD113EUF

PDTD113EUF

Nexperia

NOW NEXPERIA PDTD113EUF - SMALL

46766

PDTA144EU,115

PDTA144EU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

12671

DDTC144WCA-7-F

DDTC144WCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS NPN 200MW SOT23-3

54000

DRA3144W0L

DRA3144W0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

19960

DTD113ZUT106

DTD113ZUT106

ROHM Semiconductor

TRANS PREBIAS NPN 200MW UMT3

4144

DTC143ZEBTL

DTC143ZEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3F

7891

RN2103MFV,L3F(CT

RN2103MFV,L3F(CT

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A VESM

7825

BCR129E6327HTSA1

BCR129E6327HTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

54000

DTC114EM3T5G

DTC114EM3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 50V SOT723

7577

BCR192WH6327XTSA1

BCR192WH6327XTSA1

IR (Infineon Technologies)

BIPOLAR DIGITAL TRANSISTOR

57000

DTA023EEBTL

DTA023EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

0

DTA123EEBTL

DTA123EEBTL

ROHM Semiconductor

PNP -100MA -50V DIGITAL TRANSIST

3000

DTA123JUAT106

DTA123JUAT106

ROHM Semiconductor

TRANS PREBIAS PNP 200MW UMT3

397

DDTA123YCA-7-F

DDTA123YCA-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 200MW SOT23-3

0

RN2413TE85LF

RN2413TE85LF

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.1A SMINI

0

UNR211N00L

UNR211N00L

Panasonic

TRANS PREBIAS PNP 200MW MINI3

4075

PDTC143TU,115

PDTC143TU,115

Nexperia

TRANS PREBIAS NPN 50V SOT323

9950

DTC024EEBTL

DTC024EEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 50V 0.15W SC89

257

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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