Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
PDTC114EM,315

PDTC114EM,315

Nexperia

NPN RESISTOR-EQUIPPED TRANSISTOR

0

MUN2132T1G

MUN2132T1G

SMALL SIGNAL BIPOLAR TRANSISTOR,

195000

DTC123EETL

DTC123EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

542

MUN2212T1

MUN2212T1

TRANS PREBIAS NPN 338MW SC59

105000

UNR52A4G0L

UNR52A4G0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

1611

FJV3114RMTF

FJV3114RMTF

SMALL SIGNAL BIPOLAR TRANSISTOR,

0

UNR32A1G0L

UNR32A1G0L

Panasonic

TRANS PREBIAS NPN 100MW SSSMINI3

2343

UNR921NJ0L

UNR921NJ0L

Panasonic

TRANS PREBIAS NPN 125MW SSMINI3

4635

PDTC143TT,215

PDTC143TT,215

Nexperia

TRANS PREBIAS NPN 50V TO236AB

7666

DTA114TE-TP

DTA114TE-TP

Micro Commercial Components (MCC)

TRANS PREBIAS PNP 150MW SOT523

0

DRC5123E0L

DRC5123E0L

Panasonic

TRANS PREBIAS NPN 100MW SMINI3

7370

MMUN2115LT1G

MMUN2115LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V SOT23-3

14401

SMMUN2114LT1G

SMMUN2114LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 50V SOT23-3

2147483647

DDTA143FE-7-F

DDTA143FE-7-F

Zetex Semiconductors (Diodes Inc.)

TRANS PREBIAS PNP 150MW SOT523

75000

RN2427TE85LF

RN2427TE85LF

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS PNP 50V 0.8A SMINI

0

DTC124XEFRATL

DTC124XEFRATL

ROHM Semiconductor

NPN DIGITAL TRANSISTOR (AEC-Q101

0

MUN2137T1G

MUN2137T1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS PNP 230MW SC59

0

NHDTA144EUF

NHDTA144EUF

Nexperia

NHDTA144EU/SOT323/SC-70

10000

ADTC143TCAQ-7

ADTC143TCAQ-7

Zetex Semiconductors (Diodes Inc.)

PREBIAS TRANSISTOR SOT23 T&R 3K

0

BCR142E6327HTSA1

BCR142E6327HTSA1

IR (Infineon Technologies)

TRANS PREBIAS NPN 0.2W SOT23-3

12708

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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