Transistors - Bipolar (BJT) - Single, Pre-Biased

Image Part Number Description / PDF Quantity Rfq
DTC143ZET1G

DTC143ZET1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 50V 100MA SC75

410

NTE2414

NTE2414

NTE Electronics, Inc.

T-NPN SI WITH 10K RES

1704

DTA124EEBTL

DTA124EEBTL

ROHM Semiconductor

TRANS PREBIAS PNP 150MW EMT3

2021

PDTA144WU,115

PDTA144WU,115

Nexperia

TRANS PREBIAS PNP 50V SOT323

0

NSBC123TF3T5G

NSBC123TF3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 50V SOT1123

2147483647

DRC5144V0L

DRC5144V0L

Panasonic

TRANS PREBIAS NPN 150MW SMINI3

2975

DTC044TMT2L

DTC044TMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 50V VMT3

7350

DRA3124X0L

DRA3124X0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

10000

FJNS4202RTA

FJNS4202RTA

SMALL SIGNAL BIPOLAR TRANSISTOR

507000

DTC013ZEBTL

DTC013ZEBTL

ROHM Semiconductor

TRANS PREBIAS NPN 0.15W SC89

332

FJNS3206RTA

FJNS3206RTA

SMALL SIGNAL BIPOLAR TRANSISTOR

0

DTC123EMT2L

DTC123EMT2L

ROHM Semiconductor

TRANS PREBIAS NPN 150MW VMT3

1175

DTA114EKAT146

DTA114EKAT146

ROHM Semiconductor

TRANS PREBIAS PNP 200MW SMT3

29870

MMUN2238LT1G

MMUN2238LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PREBIAS NPN 50V SOT23-3

296324000

PDTB113EUF

PDTB113EUF

Nexperia

TRANS PREBIAS PNP 0.425W

0

DTD743EETL

DTD743EETL

ROHM Semiconductor

TRANS PREBIAS NPN 150MW EMT3

2981

RN1301,LF

RN1301,LF

Toshiba Electronic Devices and Storage Corporation

TRANS PREBIAS NPN 50V 0.1A USM

6528

MUN5215T1

MUN5215T1

SMALL SIGNAL BIPOLAR TRANSISTOR

39000

MUN5212T1

MUN5212T1

SMALL SIGNAL BIPOLAR TRANSISTOR

110724

DRA3113Z0L

DRA3113Z0L

Panasonic

TRANS PREBIAS PNP 100MW SSSMINI3

19850

Transistors - Bipolar (BJT) - Single, Pre-Biased

1. Overview

Pre-biased bipolar junction transistors (BJTs) are discrete semiconductor devices with integrated biasing resistors, designed to simplify circuit design and improve operational stability. Unlike standard BJTs requiring external biasing components, pre-biased BJTs incorporate internal resistors to set the base-emitter voltage and collector current. These devices are critical in modern electronics for applications demanding compact design, consistent performance, and reduced component count. Their ability to maintain stable operation under varying temperature and voltage conditions makes them essential in consumer electronics, industrial automation, and automotive systems.

2. Main Types and Functional Classification

TypeFunctional FeaturesApplication Examples
NPN Pre-Biased BJTPositive bias resistor network, low-side switchingLogic-level switching, LED drivers
PNP Pre-Biased BJTNegative bias resistor network, high-side switchingPower supply control, relay drivers
Digital TransistorIntegrated resistors with ESD protectionDigital logic circuits, portable devices

3. Structure and Composition

Pre-biased BJTs consist of a silicon semiconductor die with three doped regions (emitter, base, collector) forming two p-n junctions. The key structural elements include: - Monolithic Resistor Network: Thin-film or diffused resistors embedded in the die for fixed biasing - Metal Contacts: Aluminum or copper layers for external connections - Encapsulation: Plastic or ceramic packaging with standard pinouts (e.g., SOT-23, TO-92) - Passivation Layer: Silicon dioxide/nitride coating to prevent surface contamination

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base currentDetermines amplification capability
Max Collector Voltage (VCEO)Max voltage across collector-emitterDefines operating voltage range
Transition Frequency (fT)Frequency response limitCritical for RF and switching applications
Power Dissipation (Ptot)Max thermal power handlingDictates thermal management needs
Built-in Resistor Ratio (R1/R2)Internal resistor division ratioControls bias point stability

5. Application Areas

Main industries and typical equipment: - Consumer Electronics: Mobile phone chargers, wearable devices - Industrial Automation: PLC modules, motor drivers - Automotive: Sensor interfaces, LED lighting systems - Telecommunications: Base station power amplifiers - Power Management: DC-DC converter switches

6. Leading Manufacturers and Products

ManufacturerKey ProductsFeatures
ON SemiconductorMMBT3904L200mA NPN transistor with 47k bias resistors
Toshiba2SB1958PNP device with built-in 10k /4.7k resistor network
STMicroelectronicsSM6T120NAutomotive-grade digital transistor with ESD protection

7. Selection Guidelines

Key considerations: - Match hFE with required amplification/saturation characteristics - Confirm VCEO rating exceeds circuit voltage requirements - Select resistor ratios for desired bias point (e.g., R1=10k , R2=22k for mid-range bias) - Prioritize thermal performance in high-power applications - Consider package type (SMD vs. through-hole) for PCB constraints

8. Industry Trends

Emerging trends include: - Miniaturization: Development of 0.4mm pitch WLCSP packages - Integrated protection: ESD/clamp diodes in standard designs - High-frequency variants: fT > 5GHz for 5G infrastructure - Automotive qualification: Increased demand for AEC-Q101 certified devices - Green manufacturing: Lead-free packaging and low-toxicity materials

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