Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBSS5350Z,135

PBSS5350Z,135

Nexperia

TRANS PNP 50V 3A SOT223

0

PBHV8115T,215

PBHV8115T,215

Nexperia

TRANS NPN 150V 1A TO236AB

4099

BC817-25,235

BC817-25,235

Nexperia

TRANS NPN 45V 500MA TO236AB

5245

PZTA14,115

PZTA14,115

Nexperia

TRANS NPN DARL 30V 500MA SOT223

0

BC856B,235

BC856B,235

Nexperia

TRANS PNP 65V 100MA TO236AB

12243

BC52PASX

BC52PASX

Nexperia

TRANS PNP 60V 1A DFN2020D-3

188

BC816-25HR

BC816-25HR

Nexperia

BC816-25H/SOT23/TO-236AB

2788

BCX53-16,135

BCX53-16,135

Nexperia

TRANS PNP 80V 1A SOT89

2234

BC817K-25VL

BC817K-25VL

Nexperia

BC817K-25/SOT23/TO-236AB

0

BCX56,135

BCX56,135

Nexperia

TRANS NPN 80V 1A SOT89

0

PBSS8110T,215

PBSS8110T,215

Nexperia

TRANS NPN 100V 1A TO236AB

435

BCX52-16,135

BCX52-16,135

Nexperia

TRANS PNP 60V 1A SOT89

4000

BCW60D,215

BCW60D,215

Nexperia

TRANS NPN 32V 100MA TO236AB

6048

BC846A,215

BC846A,215

Nexperia

TRANS NPN 65V 100MA TO236AB

22092

BCP56-10HX

BCP56-10HX

Nexperia

TRANS NPN 80V 1A SC73

3118

BC817K-40VL

BC817K-40VL

Nexperia

BC817K-40/SOT23/TO-236AB

0

PMBT4401YSX

PMBT4401YSX

Nexperia

TRANS NPN 40V 0.6A SC-881

2700

BCX71J,215

BCX71J,215

Nexperia

TRANS PNP 45V 100MA TO236AB

11857

BC817K-40HVL

BC817K-40HVL

Nexperia

BC817K-40H SOT23 TO-236AB

9975

BC850C,215

BC850C,215

Nexperia

TRANS NPN 45V 0.1A SOT23

13962

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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