Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMBT4401,215

PMBT4401,215

Nexperia

TRANS NPN 40V 600MA TO236AB

52108

BC857,215

BC857,215

Nexperia

TRANS PNP 45V 100MA TO236AB

4544

BC807K-40VL

BC807K-40VL

Nexperia

45V, 500MA PNP GENERAL PURPOSE

60000

BSV52,215

BSV52,215

Nexperia

TRANS NPN 12V 100MA TO236AB

6

BC69-25PASX

BC69-25PASX

Nexperia

BC69PAS - 20 V, 2 A PNP MEDIUM

5035

BC860C,215

BC860C,215

Nexperia

TRANS PNP 45V 100MA TO236AB

9578

2PB709BSL,215

2PB709BSL,215

Nexperia

TRANS PNP 50V 200MA TO236AB

0

PBHV9560ZX

PBHV9560ZX

Nexperia

IC TRANS PNP 600V 0.5A SOT223

5380

BCP53-16TX

BCP53-16TX

Nexperia

TRANS PNP 80V 1A SOT223

0

BC817-40,235

BC817-40,235

Nexperia

TRANS NPN 45V 500MA TO236AB

38421

BC69-16PA,115

BC69-16PA,115

Nexperia

TRANS PNP 20V 2A 3HUSON

0

BC859C,215

BC859C,215

Nexperia

TRANS PNP 30V 100MA TO236AB

5475

PBSS4032PX,115

PBSS4032PX,115

Nexperia

TRANS PNP 30V 4.2A SOT89

0

BCX51,115

BCX51,115

Nexperia

TRANS PNP 45V 1A SOT89

200

BCP53TF

BCP53TF

Nexperia

BCP53T/SOT223/SC-73

14388

PHPT60410NYX

PHPT60410NYX

Nexperia

TRANS NPN 40V 10A LFPAK56 PWRSO8

2736

PBHV8540Z,115

PBHV8540Z,115

Nexperia

TRANS NPN 400V 0.5A SOT223

7494

PBSS4520X,135

PBSS4520X,135

Nexperia

TRANS NPN 20V 5A SOT89

0

PMBS3906,215

PMBS3906,215

Nexperia

TRANS PNP 40V 100MA TO236AB

2886

BCP68,115

BCP68,115

Nexperia

TRANS NPN 20V 1A SOT223

1855

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top