Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2PD601ART,215

2PD601ART,215

Nexperia

TRANS NPN 50V 0.1A SOT23-3

876

PMBTA42,185

PMBTA42,185

Nexperia

TRANS NPN 300V 100MA TO236AB

20013

BCP51TF

BCP51TF

Nexperia

BCP51T/SOT223/SC-73

0

PHPT60415NY,115

PHPT60415NY,115

Nexperia

POWER BIPOLAR TRANSISTOR

3000

PBSS5350T,215

PBSS5350T,215

Nexperia

TRANS PNP 50V 2A TO236AB

7341

PMST3904,135

PMST3904,135

Nexperia

TRANS NPN 40V 200MA SOT323

0

BC54PASX

BC54PASX

Nexperia

IC TRANS NPN 1A 45V SOT1061

2000

PBHV9115T,215

PBHV9115T,215

Nexperia

TRANS PNP 150V 1A SOT23

16189

BSR41,115

BSR41,115

Nexperia

TRANS NPN 60V 1A SOT89

6882

BC817-40QBZ

BC817-40QBZ

Nexperia

BC817-40QB/SOT8015/DFN1110D-3

5000

BC807-25QAZ

BC807-25QAZ

Nexperia

TRANS PNP 45V 500MA DFN1010D-3

10222

PBSS5480XZ

PBSS5480XZ

Nexperia

PBSS5480X/SOT89/MPT3

0

BC52-16PASX

BC52-16PASX

Nexperia

NOW NEXPERIA BC52-16PASX - SMALL

78000

BC817-25/DG/B2215

BC817-25/DG/B2215

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

93000

BCW89,215

BCW89,215

Nexperia

TRANS PNP 60V 100MA TO236AB

6664

PBSS4260QAZ

PBSS4260QAZ

Nexperia

TRANS NPN 60V 2A DFN1010D-3

9615

PMST4401,135

PMST4401,135

Nexperia

TRANS NPN 40V 0.6A SOT323

0

BC860B,215

BC860B,215

Nexperia

TRANS PNP 45V 100MA TO236AB

1111

PBSS2515MB,315

PBSS2515MB,315

Nexperia

TRANS NPN 15V 500MA DFN1006B-3

36

BSS64,215

BSS64,215

Nexperia

TRANS NPN 80V 100MA TO236AB

1240

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top