Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PMST5550,115

PMST5550,115

Nexperia

TRANS NPN 140V 300MA SOT323

7726

PBSS4130T,215

PBSS4130T,215

Nexperia

TRANS NPN 30V 1A TO236AB

15876

2PD601ASL,215

2PD601ASL,215

Nexperia

TRANS NPN 50V 100MA TO236AB

0

PBSS8110Z,135

PBSS8110Z,135

Nexperia

TRANS NPN 100V 1A SOT223

4753

BC857CW,135

BC857CW,135

Nexperia

TRANS PNP 45V 0.1A SOT323

0

PBSS4330PA,115

PBSS4330PA,115

Nexperia

TRANS NPN 30V 3A SOT1061

12136

BCX71K,215

BCX71K,215

Nexperia

TRANS PNP 45V 100MA TO236AB

503

BCX53-16,146

BCX53-16,146

Nexperia

TRANS PNP 80V 1A SOT89

0

PZT2222A,135

PZT2222A,135

Nexperia

TRANS NPN 40V 0.6A SOT223

48196

BC53-16PASX

BC53-16PASX

Nexperia

BC53PAS - 80V, 1 A PNP MEDIUM PO

3000

PBSS3540M,315

PBSS3540M,315

Nexperia

TRANS PNP 40V 0.5A SOT883

90894

PMBT3904MB,315

PMBT3904MB,315

Nexperia

TRANS NPN 40V 0.2A 3DFN

0

BCV26,235

BCV26,235

Nexperia

NOW NEXPERIA BCV26 - SMALL SIGNA

10000

BCW68GVL

BCW68GVL

Nexperia

BCW68GSOT23TO-236AB

8846

PBSS304NXZ

PBSS304NXZ

Nexperia

PBSS304NX/SOT89/MPT3

0

BC869-16,115

BC869-16,115

Nexperia

TRANS PNP 20V 1A SOT89

0

PBSS5140U,115

PBSS5140U,115

Nexperia

TRANS PNP 40V 1A SOT323

11680

PHPT61006PYX

PHPT61006PYX

Nexperia

TRANS PNP 100V 6A LFPAK56 PWRSO8

1495

PDTA114EU/ZL135

PDTA114EU/ZL135

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

530000

2PC4081S,135

2PC4081S,135

Nexperia

TRANS NPN 50V 150MA SOT323

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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