Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC56-16PASX

BC56-16PASX

Nexperia

NOW NEXPERIA BC56-16PAS - SMALL

37858

PMBTA42,235

PMBTA42,235

Nexperia

TRANS NPN 300V 0.1A SOT23

9910

PDTB114ET

PDTB114ET

Nexperia

NOW NEXPERIA PDTB114ET - SMALL S

30000

BC856A,215

BC856A,215

Nexperia

TRANS PNP 65V 100MA TO236AB

15896

2PD602AQL,215

2PD602AQL,215

Nexperia

TRANS NPN 50V 500MA TO236AB

82

BC55PASX

BC55PASX

Nexperia

IC TRANS NPN 1A 60 SOT1061

0

PBSS4021NT,215

PBSS4021NT,215

Nexperia

TRANS NPN 20V 4.3A TO236AB

9142

PHPT61006PY,115

PHPT61006PY,115

Nexperia

POWER BIPOLAR TRANSISTOR

0

BC847AQCZ

BC847AQCZ

Nexperia

BC847AQC/SOT8009/DFN1412D-3

5000

BCW33,215

BCW33,215

Nexperia

TRANS NPN 32V 100MA TO236AB

2435

BC857BW,135

BC857BW,135

Nexperia

TRANS PNP 45V 100MA SOT323

7174

2PA1576S,135

2PA1576S,135

Nexperia

TRANS PNP 50V 150MA SOT323

0

2PD1820AR,115

2PD1820AR,115

Nexperia

TRANS NPN 50V 0.5A SOT323

0

BC847BMB,315

BC847BMB,315

Nexperia

TRANS NPN 45V 100MA DFN1006B-3

1004

BC847C,215

BC847C,215

Nexperia

TRANS NPN 45V 0.1A SOT23

30638

BSP33,115

BSP33,115

Nexperia

TRANS PNP 80V 1A SOT223

2860

PBSS303PZ,135

PBSS303PZ,135

Nexperia

TRANS PNP 30V 5.3A SOT-223

1434

PBSS4240TVL

PBSS4240TVL

Nexperia

PBSS4240T/SOT23/TO-236AB

0

PBSS9110X,135

PBSS9110X,135

Nexperia

TRANS PNP 100V 1A SOT89

187

BC846AW,115

BC846AW,115

Nexperia

TRANS NPN 65V 100MA SOT323

8990

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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