Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCV27,215

BCV27,215

Nexperia

TRANS NPN DARL 30V 500MA TO236AB

3025

PZT2907A,115

PZT2907A,115

Nexperia

TRANS PNP 60V 0.6A SOT223

1554

BC817-25QBZ

BC817-25QBZ

Nexperia

BC817-25QB/SOT8015/DFN1110D-3

4980

BC55-10PA,115

BC55-10PA,115

Nexperia

TRANS NPN 60V 1A 3HUSON

1579

BC807-25HVL

BC807-25HVL

Nexperia

BC807-25H/SOT23/TO-236AB

8900

PZT4403,115

PZT4403,115

Nexperia

TRANS PNP 40V 600MA SOT223

14

MJD44H11AJ

MJD44H11AJ

Nexperia

TRANS NPN 80V 8A DPAK

1268

PBHV9040T,215

PBHV9040T,215

Nexperia

TRANS PNP 400V 0.25A SOT23-3

13453

PBSS303PD,115

PBSS303PD,115

Nexperia

TRANS PNP 60V 1A 6TSOP

3000

PHPT60606PYX

PHPT60606PYX

Nexperia

TRANS PNP BIPO 60V 6A 8LFPAK

0

BC817K-25HR

BC817K-25HR

Nexperia

BC817 - 45 V, 500 MA NPN GENERAL

2043000

PBSS306PX,115

PBSS306PX,115

Nexperia

TRANS PNP 100V 3.7A SOT89

514

PMMT591A,235

PMMT591A,235

Nexperia

TRANS PNP 40V 1A TO236AB

702

PMBT5551,235

PMBT5551,235

Nexperia

TRANS NPN 160V 0.3A SOT23

0

BC846BW,115

BC846BW,115

Nexperia

TRANS NPN 65V 100MA SOT323

15579

PBSS305ND,115

PBSS305ND,115

Nexperia

TRANS NPN 100V 1A 6TSOP

2747

PMMT491A,235

PMMT491A,235

Nexperia

TRANS NPN 40V 1A TO236AB

6096

PBHV9414ZX

PBHV9414ZX

Nexperia

TRANS PNP 140V 4A SOT223

2975

BC847AQBZ

BC847AQBZ

Nexperia

BIPOLAR DISCRETES

4484

PMBTA44,215

PMBTA44,215

Nexperia

TRANS NPN 400V 0.3A SOT23

68300

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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