Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PBHV9050Z,115

PBHV9050Z,115

Nexperia

TRANS PNP 500V 250MA SOT223

370

BCP56-10TF

BCP56-10TF

Nexperia

TRANS NPN 80V 1A SOT223

1893

PBSS4360XX

PBSS4360XX

Nexperia

PBSS4360X/SOT89/MPT3

667

BF723,115

BF723,115

Nexperia

TRANS PNP 250V 100MA SOT223

45

PBSS4330X,135

PBSS4330X,135

Nexperia

TRANS NPN 30V 3A SOT89

0

PBSS5350X,147

PBSS5350X,147

Nexperia

TRANS PNP 50V 3A SOT89

1880

PMST5550,135

PMST5550,135

Nexperia

TRANS NPN 140V 300MA SOT323

0

BC817-16QBZ

BC817-16QBZ

Nexperia

BC817-16QB/SOT8015/DFN1110D-3

4950

BC857BW,115

BC857BW,115

Nexperia

TRANS PNP 45V 100MA SOT323

307315

BC806-25WF

BC806-25WF

Nexperia

BC806-25W/SOT323/SC-70

9809

BCX18,235

BCX18,235

Nexperia

TRANS PNP 25V 0.5A SOT23

0

BC69-25PA,115

BC69-25PA,115

Nexperia

TRANSISTOR PNP 20V 2A SOT1061

0

BCP53F

BCP53F

Nexperia

BCP53/SOT223/SC-73

0

BC54PA,115

BC54PA,115

Nexperia

TRANS NPN 45V 1A 3HUSON

1322

BST61,115

BST61,115

Nexperia

TRANS PNP DARL 60V 1A SOT89

1045

BCP55-16F

BCP55-16F

Nexperia

TRANS NPN 60V 1A SOT223

0

BC850C,235

BC850C,235

Nexperia

TRANS NPN 45V 100MA TO236AB

2648

BC817K-25HVL

BC817K-25HVL

Nexperia

BC817K-25H SOT23 TO-236AB

2628

BC859BW,115

BC859BW,115

Nexperia

TRANS PNP 30V 0.1A SOT323

0

BC807-16QCZ

BC807-16QCZ

Nexperia

BC807-16QC/SOT8009/DFN1412D-3

5000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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