Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP56T,115

BCP56T,115

Nexperia

1A, 80V, NPN, SILICON

6000

BF824,215

BF824,215

Nexperia

TRANS PNP 30V 25MA TO236AB

320

BF623,115

BF623,115

Nexperia

TRANS PNP 250V 0.05A SOT89

1947

PMST3906,115

PMST3906,115

Nexperia

TRANS PNP 40V 200MA SOT323

2734

BCP53-10H,115

BCP53-10H,115

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

13000

PBHV8515QAZ

PBHV8515QAZ

Nexperia

TRANS NPN 150V 0.5A SOT1215

3985

PMBT3904M,315

PMBT3904M,315

Nexperia

TRANS NPN 40V 0.2A SOT883

20601

BC56-10PASX

BC56-10PASX

Nexperia

IC TRANS NPN 1A 80V SOT1061

2869

BCP52-10,135

BCP52-10,135

Nexperia

TRANS PNP 60V 1A SOT223

6865

BC846,215

BC846,215

Nexperia

TRANS NPN 65V 100MA TO236AB

54994

PMBT5550,235

PMBT5550,235

Nexperia

TRANS NPN 140V 0.3A SOT23

9602

BCX53,115

BCX53,115

Nexperia

TRANS PNP 80V 1A SOT89

0

PBSS5320T,215

PBSS5320T,215

Nexperia

TRANS PNP 20V 2A TO236AB

2169

PMBT3906M,315

PMBT3906M,315

Nexperia

TRANS PNP 40V 0.2A SOT883

10299

BSR43,115

BSR43,115

Nexperia

TRANS NPN 80V 1A SOT89

517

PBSS302NZ,135

PBSS302NZ,135

Nexperia

TRANS NPN 20V 5.8A SOT223

6239

PXT2907A,115

PXT2907A,115

Nexperia

TRANS PNP 60V 600MA SOT89

1000

PBSS5330PASX

PBSS5330PASX

Nexperia

NOW NEXPERIA PBSS5330PASX - SMAL

18170

BC817K-16VL

BC817K-16VL

Nexperia

BC817K-16/SOT23/TO-236AB

0

2PC4081Q,135

2PC4081Q,135

Nexperia

TRANS NPN 50V 0.15A SOT323

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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