Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BCP52,135

BCP52,135

Nexperia

TRANS PNP 60V 1A SOT223

4094

PMBT3904,215

PMBT3904,215

Nexperia

TRANS NPN 40V 200MA TO236AB

7528

BC847AW,115

BC847AW,115

Nexperia

TRANS NPN 45V 100MA SOT323

278

BC857AM,315

BC857AM,315

Nexperia

BC857M SERIES - PNP GENERAL PURP

168750

PBSS5320X,135

PBSS5320X,135

Nexperia

TRANS PNP 20V 3A SOT89

3768

PMSTA92,115

PMSTA92,115

Nexperia

TRANS PNP 300V 100MA SOT323

1053

PDTD113ZU135

PDTD113ZU135

Nexperia

PDTD113ZU - 0.5A, 50V, NPN

8620

BCP56HX

BCP56HX

Nexperia

TRANS NPN 80V 1A SC73

904

BCP68-25,115

BCP68-25,115

Nexperia

TRANS NPN 20V 2A SOT223

799

PBSS3540MB,315

PBSS3540MB,315

Nexperia

TRANS PNP 40V 500MA DFN1006B-3

493

PBSS4021NX,115

PBSS4021NX,115

Nexperia

TRANS NPN 20V 7A SOT89

950

BCX19,215

BCX19,215

Nexperia

TRANS NPN 45V 500MA TO236AB

5935

PHPT60415PYX

PHPT60415PYX

Nexperia

TRANS PNP 40V 15A LFPAK56 PWRSO8

684

PMBT5551,215

PMBT5551,215

Nexperia

TRANS NPN 160V 300MA TO236AB

3275

PBSS305PD,115

PBSS305PD,115

Nexperia

TRANS PNP 100V 2A 6TSOP

23014

PBSS4032PD,115

PBSS4032PD,115

Nexperia

TRANS PNP 30V 2.7A 6TSOP

140

BC846B215-NEX

BC846B215-NEX

Nexperia

0.1A, 65V, NPN, TO 236AB

6000

PMBT3906,235

PMBT3906,235

Nexperia

TRANS PNP 40V 200MA TO236AB

16887

PBSS3515MB,315

PBSS3515MB,315

Nexperia

TRANS PNP 15V 500MA DFN1006B-3

29912

PBSS304PZ,135

PBSS304PZ,135

Nexperia

TRANS PNP 60V 4.5A SOT-223

4072

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
RFQ BOM Call Skype Email
Top