Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PHPT61010NYX

PHPT61010NYX

Nexperia

TRANS NPN BIPO 100V 10A 8LFPAK

41

BCP69-16F

BCP69-16F

Nexperia

BCP69-16/SC-73/REEL 13" Q1/T1

3702

BCX53TF

BCX53TF

Nexperia

BCX53T/SOT89/MPT3

1670

PHPT61010PYX

PHPT61010PYX

Nexperia

TRANS PNP 100V 10A LFPAK56

1500

BC847W,115

BC847W,115

Nexperia

TRANS NPN 45V 100MA SOT323

11806

BC856AW,115

BC856AW,115

Nexperia

TRANS PNP 65V 100MA SOT323

3000

PMMT591A,215

PMMT591A,215

Nexperia

TRANS PNP 40V 1A TO236AB

430

BCX56-16,115

BCX56-16,115

Nexperia

TRANS NPN 80V 1A SOT89

48542

2PB709ASL,235

2PB709ASL,235

Nexperia

TRANS PNP 45V 0.1A SOT-23

0

BCX56-16TF

BCX56-16TF

Nexperia

BCX56-16T/SOT89/MPT3

2865

PBSS4041PX,115

PBSS4041PX,115

Nexperia

TRANS PNP 60V 5A SOT89

3533

PBSS304ND,115

PBSS304ND,115

Nexperia

TRANS NPN 80V 1A 6TSOP

0

PBSS4021PT,215

PBSS4021PT,215

Nexperia

TRANS PNP 20V 3.5A SOT23

2347

PBSS5360ZX

PBSS5360ZX

Nexperia

TRANS PNP 60V 3A

0

BC817-40W/ZL135

BC817-40W/ZL135

Nexperia

SMALL SIGNAL BIPOLAR TRANSISTOR

160000

BCP56-10,135

BCP56-10,135

Nexperia

TRANS NPN 80V 1A SOT223

0

PBSS5350D,135

PBSS5350D,135

Nexperia

TRANS PNP 50V 3A 6TSOP

0

BC849C,235

BC849C,235

Nexperia

TRANS NPN 30V 100MA TO236AB

9578

BC807-25HZ

BC807-25HZ

Nexperia

BC807-25H/SOT23/TO-236AB

30000

PBSS305NX,115

PBSS305NX,115

Nexperia

TRANS NPN 80V 4.6A SOT89

11791

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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