Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC546CTA

BC546CTA

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

8468

NSVT1418LT1G

NSVT1418LT1G

Sanyo Semiconductor/ON Semiconductor

PNP TRANSISTOR 160V

189000

SBC847CWT1G

SBC847CWT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 45V 0.1A SOT-323

639590000

2SA2125-TD-H

2SA2125-TD-H

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 3A PCP

131462000

MJE2955TG

MJE2955TG

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 10A TO220AB

646

NSV2029M3T5G

NSV2029M3T5G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 50V 0.15A SOT723

0

BC857CLT1G

BC857CLT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 45V 100MA SOT23-3

47333

NSM80100MT1G

NSM80100MT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 0.5A SC-74-6

0

NSV1C201LT1G

NSV1C201LT1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 100V 2A SOT23-3

0

SBCP56-10T1G

SBCP56-10T1G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 80V 1A SOT-223

2147483647

NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 100V 8A DPAK

92

NJVMJB45H11T4G

NJVMJB45H11T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 10A D2PAK

471600

KSP55TA

KSP55TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 60V 500MA TO92-3

9794

NSVMSB1218A-RT1G

NSVMSB1218A-RT1G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP BIPOLAR SOT323-3

0

BD677G

BD677G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 60V 4A TO225AA

5112

SMMBTA14LT3G

SMMBTA14LT3G

Sanyo Semiconductor/ON Semiconductor

TRANS NPN DARL 30V 0.3A SOT23

0

BC640TA

BC640TA

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 80V 1A TO92-3

1298

FJE3303H2TU

FJE3303H2TU

Sanyo Semiconductor/ON Semiconductor

TRANS NPN 400V 1.5A TO126-3

191048000

MJD127T4G

MJD127T4G

Sanyo Semiconductor/ON Semiconductor

TRANS PNP DARL 100V 8A DPAK

14365

2SB1216S-TL-E

2SB1216S-TL-E

Sanyo Semiconductor/ON Semiconductor

TRANS PNP 100V 4A TPFA

1863

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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