Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
JANTXV2N6300

JANTXV2N6300

Roving Networks / Microchip Technology

TRANS NPN DARL 60V 8A TO66

0

2N2432AUB

2N2432AUB

Roving Networks / Microchip Technology

BJTS

0

JANTXV2N3507A

JANTXV2N3507A

Roving Networks / Microchip Technology

TRANS NPN 50V 3A TO39

0

2N6192

2N6192

Roving Networks / Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

0

JANTX2N2369AU

JANTX2N2369AU

Roving Networks / Microchip Technology

TRANS NPN 15V SMD

0

JANTXV2N3506

JANTXV2N3506

Roving Networks / Microchip Technology

TRANS NPN 40V 3A TO-39

0

JAN2N6058

JAN2N6058

Roving Networks / Microchip Technology

TRANS NPN DARL 80V 12A TO-3

0

JANTX2N6211

JANTX2N6211

Roving Networks / Microchip Technology

TRANS PNP 225V 2A TO-66

0

JANTX2N5666

JANTX2N5666

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

JANTX2N6301

JANTX2N6301

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N4905

2N4905

Roving Networks / Microchip Technology

NPN SILICON TRANSISTOR

0

JANTX2N3506L

JANTX2N3506L

Roving Networks / Microchip Technology

TRANS NPN 40V 3A TO5

0

2N3440U4

2N3440U4

Roving Networks / Microchip Technology

POWER BJT

0

JANTX2N2880

JANTX2N2880

Roving Networks / Microchip Technology

TRANS NPN 80V 5A TO59

0

JANTXV2N3902

JANTXV2N3902

Roving Networks / Microchip Technology

TRANS NPN 400V 3.5A TO3

0

JAN2N5685

JAN2N5685

Roving Networks / Microchip Technology

TRANS NPN 60V 50A TO-3

0

JAN2N5680

JAN2N5680

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JANTXV2N3498L

JANTXV2N3498L

Roving Networks / Microchip Technology

TRANS NPN 100V 0.5A TO5

0

JANTX2N6383

JANTX2N6383

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JAN2N1613

JAN2N1613

Roving Networks / Microchip Technology

TRANS NPN 30V 0.5A

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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