Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N5956

2N5956

Roving Networks / Microchip Technology

PNP POWER TRANSISTOR SILICON AMP

0

JANTX2N3584

JANTX2N3584

Roving Networks / Microchip Technology

TRANS NPN 250V 2A TO-39

0

JANTX2N3771

JANTX2N3771

Roving Networks / Microchip Technology

TRANS NPN 40V 30A TO-3

0

JANTX2N3439U4

JANTX2N3439U4

Roving Networks / Microchip Technology

TRANS NPN 350V 1A UA

0

JANTX2N3766

JANTX2N3766

Roving Networks / Microchip Technology

TRANS NPN 60V 4A

0

2N5782

2N5782

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N497

2N497

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NPN SILICON TRANSISTOR

0

JANTX2N5152L

JANTX2N5152L

Roving Networks / Microchip Technology

TRANS NPN 80V 2A TO5

0

JAN2N3635UB

JAN2N3635UB

Roving Networks / Microchip Technology

TRANS PNP 140V 1A

0

JANTXV2N6284

JANTXV2N6284

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N5003

2N5003

Roving Networks / Microchip Technology

NPN SILICON TRANSISTOR

0

2N1483

2N1483

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JANTX2N2222AUB/TR

JANTX2N2222AUB/TR

Roving Networks / Microchip Technology

SMALL-SIGNAL BJT

0

JAN2N3420S

JAN2N3420S

Roving Networks / Microchip Technology

TRANS NPN 60V 3A

0

2N3506AL

2N3506AL

Roving Networks / Microchip Technology

NPN POWER SILICON TRANSISTORS

0

2N1484

2N1484

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N5237

2N5237

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JAN2N4235

JAN2N4235

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

JAN2N3507AL

JAN2N3507AL

Roving Networks / Microchip Technology

TRANS NPN 50V 3A TO5

0

JANTXV2N3507AL

JANTXV2N3507AL

Roving Networks / Microchip Technology

TRANS NPN 50V 3A TO5

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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