Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
2N3867S

2N3867S

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

JAN2N3997

JAN2N3997

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TRANS NPN 80V 10A TO111

0

JANTX2N3506AL

JANTX2N3506AL

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TRANS NPN 40V 3A TO5

0

2N3421U4

2N3421U4

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NPN POWER SILICON TRANSISTORS

0

JANTX2N3506A

JANTX2N3506A

Roving Networks / Microchip Technology

TRANS NPN 40V 3A TO-39

0

2N336ALT2

2N336ALT2

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NPN POWER SILICON TRANSISTORS

0

JANSR2N2484UB

JANSR2N2484UB

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BJTS

0

JAN2N2218

JAN2N2218

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TRANS NPN 30V 0.8A TO39

0

JAN2N335

JAN2N335

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TRANS NPN 45V 10MA

0

JAN2N1486

JAN2N1486

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TRANS NPN 55V 3A

0

JAN2N6251

JAN2N6251

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TRANS NPN 350V 10A TO-3

0

JAN2N7370

JAN2N7370

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TRANS NPN DARL 100V 12A TO254

0

JAN2N2907AL

JAN2N2907AL

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TRANS PNP 60V 0.6A 4UA

0

2N4910

2N4910

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NPN SILICON TRANSISTOR

0

JAN2N3998

JAN2N3998

Roving Networks / Microchip Technology

TRANS NPN 80V 10A TO59

0

JAN2N3498L

JAN2N3498L

Roving Networks / Microchip Technology

TRANS NPN 100V 0.5A TO5

0

JANTX2N3767

JANTX2N3767

Roving Networks / Microchip Technology

NPN TRANSISTOR

0

2N3752

2N3752

Roving Networks / Microchip Technology

SMALL SIGNAL BIPOLAR TRANSISTOR

13

JANTX2N2906AUA

JANTX2N2906AUA

Roving Networks / Microchip Technology

TRANS PNP 60V 0.6A

0

2N2813

2N2813

Roving Networks / Microchip Technology

PNP TRANSISTOR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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