Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC848B/DG/B3215

BC848B/DG/B3215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

120000

BUJ303B,127

BUJ303B,127

NXP Semiconductors

NOW WEEN - BUJ303B - POWER BIPOL

6278

2PA1774Q,115

2PA1774Q,115

NXP Semiconductors

TRANS PNP 50V 150MA SC75

21655

PUMD17/ZL115

PUMD17/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

9000

BC56PAS115

BC56PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

78000

BCX17/DG/B4215

BCX17/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

42000

BCV62B/DG/B2215

BCV62B/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

75000

BC817-40/6235

BC817-40/6235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

50000

BUJ302A,127

BUJ302A,127

NXP Semiconductors

NOW WEEN - BUJ302A - POWER BIPOL

15825

BC856BM315

BC856BM315

NXP Semiconductors

60 V, 100MA PNP GENERAL PURPOSE

0

PBSS5240Z115

PBSS5240Z115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC849BW,115

BC849BW,115

NXP Semiconductors

NOW NEXPERIA BC849BW - SMALL SIG

671497

BC54-16PAS115

BC54-16PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PMBT4403/S911215

PMBT4403/S911215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

181700

PBSS4130QAZ

PBSS4130QAZ

NXP Semiconductors

PBSS4130QA - 30 V, 1 A NPN LOW V

10000

2PC4081R/ZL115

2PC4081R/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

1950000

PDTB123YU135

PDTB123YU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

PVR100AZ-B5V0,115

PVR100AZ-B5V0,115

NXP Semiconductors

TRANS NPN 45V 100MA SOT223

2781

BCW61C/DG/B4215

BCW61C/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

35990

BC856T,115

BC856T,115

NXP Semiconductors

BC856T

52922

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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