Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
BC848B/DG/B4215

BC848B/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC69-16PAS115

BC69-16PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC857AQAZ

BC857AQAZ

NXP Semiconductors

NOW NEXPERIA BC857AQA SMALL SIGN

177272

BC857AW,135

BC857AW,135

NXP Semiconductors

NOW NEXPERIA BC857AW - SMALL SIG

310000

PUMH11/ZL135

PUMH11/ZL135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

10000

BFR505215

BFR505215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

30000

BFU580G115

BFU580G115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

12000

BC68PASX

BC68PASX

NXP Semiconductors

BC68PAS - 20 V, 2 A NPN MEDIUM P

0

PDTC123EMB

PDTC123EMB

NXP Semiconductors

NOW NEXPERIA PDTC123EMB - SMALL

0

PVR100AZ-B2V5,115

PVR100AZ-B2V5,115

NXP Semiconductors

TRANS NPN 45V 100MA SOT223

3893

PMST6428,135

PMST6428,135

NXP Semiconductors

NOW NEXPERIA PMST6428 - SMALL SI

688998

BC54-10PA,115

BC54-10PA,115

NXP Semiconductors

NOW NEXPERIA BC54-10PA - SMALL S

45000

PMBTA06/DG/B3235

PMBTA06/DG/B3235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

119030

PMBT4401/S911,215

PMBT4401/S911,215

NXP Semiconductors

PMBT4401 - NPN SWITCHING TRANSIS

72000

PMBT2907A/MIG215

PMBT2907A/MIG215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

75000

BC69PAS115

BC69PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC69PASX

BC69PASX

NXP Semiconductors

NOW NEXPERIA BC69PASX - SMALL SI

105000

BC807-16/6215

BC807-16/6215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

339000

MPS3906,126

MPS3906,126

NXP Semiconductors

TRANS PNP 40V 100MA TO92-3

4000

BC52-10PAS115

BC52-10PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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