Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PUMH10/ZL115

PUMH10/ZL115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

33000

PMST5088,115

PMST5088,115

NXP Semiconductors

NOW NEXPERIA PMST5088 - SMALL SI

641293

BC53PAS115

BC53PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

60000

PMP5201Y/DG/B2115

PMP5201Y/DG/B2115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

120000

BC846BW/DG/B2135

BC846BW/DG/B2135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

540000

PDTA143EMB

PDTA143EMB

NXP Semiconductors

NOW NEXPERIA PDTA143EMB - SMALL

0

BC857T,115

BC857T,115

NXP Semiconductors

BC857T

177000

BFU550W135

BFU550W135

NXP Semiconductors

NPN WIDEBAND SILICON RF TRANSIST

8075

BC807-40/DG/B2215

BC807-40/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

57000

BC807-40/S501215

BC807-40/S501215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTC144EU/DG/B3115

PDTC144EU/DG/B3115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

384000

BC858W,135

BC858W,135

NXP Semiconductors

NOW NEXPERIA BC858W - SMALL SIGN

90000

BC856BW/DG/B3115

BC856BW/DG/B3115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

182280

PBSS5240ZX

PBSS5240ZX

NXP Semiconductors

NOW NEXPERIA PBSS5240ZX - SMALL

266900

BC51-10PA,115

BC51-10PA,115

NXP Semiconductors

NOW NEXPERIA BC51-10PA - SMALL S

77790

PMBTA06/6235

PMBTA06/6235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

170000

BC847C/DG/B3215

BC847C/DG/B3215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

270000

PDTB123EU135

PDTB123EU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

39549

PHPT60406NY115

PHPT60406NY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR NPN

6000

BCX56-16115

BCX56-16115

NXP Semiconductors

NOW NEXPERIA SMALL SIGNAL BIPOLA

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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