Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PDTD143XT215

PDTD143XT215

NXP Semiconductors

500 MA, 50 V NPN RESISTOR-EQUIPP

8030

PMBT2222A/LF1215

PMBT2222A/LF1215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

157000

BC55-10PAS115

BC55-10PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

NMBT3906215

NMBT3906215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

314500

PDTD114EU115

PDTD114EU115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

53666

PBSS3540E,115

PBSS3540E,115

NXP Semiconductors

TRANS PNP 40V 500MA SC75

95574

PDTC115EMB

PDTC115EMB

NXP Semiconductors

NOW NEXPERIA PDTC115EMB - SMALL

0

PDTB143XU135

PDTB143XU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

59424

BC68PAS115

BC68PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BFR93AW135

BFR93AW135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

301045

2PD601AR,115

2PD601AR,115

NXP Semiconductors

TRANS NPN 50V 100MA SMT3

18000

BC51PAS115

BC51PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PMBT4401YS115

PMBT4401YS115

NXP Semiconductors

40 V, 600 MA, DOUBLE NPN SWITCHI

312827

BC68-25PAS115

BC68-25PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PDTA114EK115

PDTA114EK115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

716600

BUJD203AD,118

BUJD203AD,118

NXP Semiconductors

NOW WEEN - BUJD203AD - POWER BIP

2261

BC850C/AU235

BC850C/AU235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

20000

BC846BM315

BC846BM315

NXP Semiconductors

65 V, 100MA NPN GENERAL PURPOSE

17480

BC69-16PASX

BC69-16PASX

NXP Semiconductors

NOW NEXPERIA BC69-16PASX - SMALL

93000

PMBT2222A/DG,215

PMBT2222A/DG,215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

15000

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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