Transistors - Bipolar (BJT) - Single

Image Part Number Description / PDF Quantity Rfq
PDTB143EU135

PDTB143EU135

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

PBSS3515E,115

PBSS3515E,115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR,

1829299

PEMD16115

PEMD16115

NXP Semiconductors

0.1A, 50V, 2-ELEMENT, NPN AND P

5150

PMEM4020ND,115

PMEM4020ND,115

NXP Semiconductors

TRANS NPN 40V 950MA 6TSOP

3000

BC807-25/6235

BC807-25/6235

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

370000

BF550/DG/B2215

BF550/DG/B2215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

78000

BC807-40/6215

BC807-40/6215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

168000

BUJ302AX,127

BUJ302AX,127

NXP Semiconductors

NOW WEEN - BUJ302AX - POWER BIPO

1669

2PD601ASW,115

2PD601ASW,115

NXP Semiconductors

NOW NEXPERIA 2PD601ASW - SMALL S

704258

PHPT60415PY115

PHPT60415PY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR, PNP

0

BC817-16/6215

BC817-16/6215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

27000

PDTD113ZU115

PDTD113ZU115

NXP Semiconductors

500 MA, 50 V NPN RESISTOR-EQUIPP

11340

PDTB143ET215

PDTB143ET215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

33950

BC847BW/MI115

BC847BW/MI115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

732000

BC847AW,135

BC847AW,135

NXP Semiconductors

NOW NEXPERIA BC847AW - SMALL SIG

380000

PHPT60603PY115

PHPT60603PY115

NXP Semiconductors

POWER BIPOLAR TRANSISTOR, LFPAK

39800

BC846B/DG/B4215

BC846B/DG/B4215

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

BC56-10PAS115

BC56-10PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

54000

BFU590Q115

BFU590Q115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

128128

BC54-10PAS115

BC54-10PAS115

NXP Semiconductors

SMALL SIGNAL BIPOLAR TRANSISTOR

0

Transistors - Bipolar (BJT) - Single

1. Overview

Bipolar Junction Transistors (BJTs) are three-terminal semiconductor devices that use both electron and hole charge carriers. They form the foundation of analog electronics through their ability to amplify signals and control current flow. BJTs remain critical in modern electronics for applications ranging from audio amplifiers to power management circuits, offering superior linearity and robustness in switching operations.

2. Main Types & Functional Classification

TypeFunctional CharacteristicsApplication Examples
NPN TransistorMajority carriers: electrons. Requires positive base current for conduction.Low-noise amplifiers, digital logic circuits
PNP TransistorMajority carriers: holes. Conducts with negative base current.Power supply circuits, motor controllers
High-Frequency BJTOptimized for RF/microwave signal amplification (fT > 100 MHz)Wireless communication systems, radar
Power BJTHigh current/voltage ratings (IC > 1A, VCE > 50V)Switch-mode power supplies, motor drives

3. Structure & Composition

BJTs consist of three doped semiconductor regions forming two p-n junctions:

  • Emitter: Heavily doped region emitting charge carriers
  • Base: Thin, lightly doped middle region controlling carrier flow
  • Collector: Moderately doped region collecting carriers

Manufactured using silicon (common) or germanium (historic) with planar processing technology. The structure forms either NPN (n-type emitter/base/collector) or PNP configuration, with metal contacts for external connections.

4. Key Technical Specifications

ParameterDescriptionImportance
Current Gain (hFE)Ratio of collector to base current (10-1000)Determines amplification capability
Transition Frequency (fT)Frequency at which current gain drops to 1Limits high-frequency performance
Max Collector Current (ICmax)Maximum allowable continuous collector currentDefines power handling capability
Breakdown Voltage (VCEO)Max voltage between collector and emitterPrevents device failure under stress
Saturation Voltage (VCEsat)Voltage drop in fully conducting stateAffects power efficiency in switching

5. Application Areas

  • Consumer Electronics: Audio amplifiers, LED drivers
  • Automotive: Engine control units, electric vehicle inverters
  • Industrial: PLCs, motor controllers
  • Telecommunications: RF power amplifiers, fiber optic transceivers
  • Aerospace: Avionics systems, satellite transponders

6. Leading Manufacturers & Products

ManufacturerProduct SeriesKey SpecificationsTypical Use
ON Semiconductor2N3904hFE: 100-300, fT: 300 MHzGeneral-purpose switching
InfineonBC547VCEO: 50V, ICmax: 100mAAnalog signal amplification
STMicroelectronics2SD2656ICmax: 15A, VCEO: 80VPower inverter applications
Diodes Inc.BFR93AfT: 10 GHz, Noise Figure: 2dBHigh-frequency front-end amplifiers

7. Selection Guidelines

  • Determine operating frequency: Select fT > 3 target frequency
  • Power requirements: Ensure Icmax and VCEO exceed circuit requirements by 20%
  • Thermal considerations: Calculate power dissipation (P=VCE IC)
  • Package type: TO-92 for low power, TO-220 for high-power applications
  • Environmental factors: Consider temperature ratings for industrial/military use

8. Industry Trends

Future developments include:

  • High-frequency BJTs operating beyond 100 GHz for 6G communication
  • Integrated BJT-MOSFET hybrid devices (BiCMOS) for mixed-signal applications
  • Wide-bandgap materials (SiC/GaN) for higher power density
  • Miniaturization through chip-scale packaging
  • Improved thermal management solutions for automotive applications
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